Centering substrates on a chuck
US-10224225-B2 · Mar 5, 2019 · US
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Levy Max G patents
Levy Max G is listed as an inventor on 24 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Levy Max G |
| Total patents | 24 |
| First publication | Jun 16, 2015 |
| Latest publication | Mar 5, 2019 |
Notable patents
Publications ranked by popularity score, then publication date.
Centering substrates on a chuck
US-2018240694-A1 · Aug 23, 2018 · US
Tapered gate oxide in LDMOS devices
US-10050115-B2 · Aug 14, 2018 · US
Centering substrates on a chuck
US-9997385-B2 · Jun 12, 2018 · US
Structures with contact trenches and isolation trenches
US-9893157-B1 · Feb 13, 2018 · US
Semiconductor device with metal extrusion formation
US-9825120-B2 · Nov 21, 2017 · US
Semiconductor device with metal extrusion formation
US-9825119-B2 · Nov 21, 2017 · US
Centering substrates on a chuck
US-2017221742-A1 · Aug 3, 2017 · US
Apparatus and method for centering substrates on a chuck
US-9685362-B2 · Jun 20, 2017 · US
Dual shallow trench isolation (STI) structure for field effect transistor (FET)
US-9595579-B2 · Mar 14, 2017 · US
Recent patents
Latest publications not already listed above.
Semiconductor device with metal extrusion formation
US-9548349-B2 · Jan 17, 2017 · US
Method and apparatus for detecting foreign material on a chuck
US-9508578-B2 · Nov 29, 2016 · US
Semiconductor device with metal extrusion formation
US-2016343797-A1 · Nov 24, 2016 · US
Semiconductor device with metal extrusion formation
US-2016343798-A1 · Nov 24, 2016 · US
Controlled metal extrusion opening in semiconductor structure and method of forming
US-9484301-B2 · Nov 1, 2016 · US
Tapered gate oxide in ldmos devices
US-2016190269-A1 · Jun 30, 2016 · US
Low leakage, high frequency devices
US-9337310-B2 · May 10, 2016 · US
Semiconductor device with metal extrusion formation
US-2015380478-A1 · Dec 31, 2015 · US
Low leakage, high frequency devices
US-2015318378-A1 · Nov 5, 2015 · US
Controlled metal extrusion opening in semiconductor structure and method of forming
US-2015255395-A1 · Sep 10, 2015 · US
Dual shallow trench isolation (sti) field effect transistor (fet) and methods of forming
US-2015255539-A1 · Sep 10, 2015 · US
Apparatus and Method for Centering Substrates on a Chuck
US-2015235881-A1 · Aug 20, 2015 · US
Method and apparatus for detecting foreign material on a chuck
US-2015219479-A1 · Aug 6, 2015 · US
Controlled metal extrusion opening in semiconductor structure and method of forming
US-9059258-B2 · Jun 16, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 20 |
| Globalfoundries Inc | 6 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P72/50 | 6 |
| H10P72/0606 | 6 |
| Y10T29/49764 | 6 |
| Y10T279/21 | 6 |
| G01B17/00 | 6 |