Method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof
US-2015035117-A1 · Feb 5, 2015 · US
Controlled metal extrusion opening in semiconductor structure and method of forming
US9484301B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9484301-B2 |
| Application number | US-201514718466-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 21, 2015 |
| Priority date | Mar 4, 2013 |
| Publication date | Nov 1, 2016 |
| Grant date | Nov 1, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor structure comprising: an aluminum layer including: an aluminum island within the aluminum layer for creating an active circuit area of the semiconductor structure; and an opening extending through the aluminum layer in a non-active circuit area of the semiconductor structure adjacent the aluminum island, the opening including a lateral extrusion of the aluminum layer of the semiconductor structure. 2. The semiconductor structure of claim 1 , further comprising a substantially ring-shaped opening extending through the aluminum layer, the substantially ring-shaped opening surrounding the aluminum island within the aluminum layer.
Assignees
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Classifications
the principal metal being aluminium · CPC title
Capacitor integral with wiring layers · CPC title
Barrier, adhesion or liner layers · CPC title
by filling conductive material into holes, grooves or trenches · CPC title
Layouts of interconnections · CPC title
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Frequently asked questions
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- What does patent US9484301B2 cover?
- Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The ope…
- Who is the assignee on this patent?
- Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10W20/435. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 01 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).