Three dimensional perpendicular magnetic tunnel junction with thin film transistor array
US-12069964-B2 · Aug 20, 2024 · US
This page is not indexed by search engines while we improve data quality.
Levi Amitay patents
Levi Amitay is listed as an inventor on 73 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Levi Amitay |
| Total patents | 73 |
| First publication | Jan 22, 2019 |
| Latest publication | Aug 20, 2024 |
Notable patents
Publications ranked by popularity score, then publication date.
Compact and efficient CMOS inverter
US-11688649-B2 · Jun 27, 2023 · US
DRAM with selective epitaxial cell transistor
US-11626407-B2 · Apr 11, 2023 · US
Selector transistor with continuously variable current drive
US-11545524-B2 · Jan 3, 2023 · US
Three dimensional perpendicular magnetic tunnel junction with thin film transistor array
US-2022344580-A1 · Oct 27, 2022 · US
Selector transistor with metal replacement gate wordline
US-11444123-B2 · Sep 13, 2022 · US
Three dimensional perpendicular magnetic tunnel junction with thin film transistor array
US-11417829-B2 · Aug 16, 2022 · US
Dram with selective epitaxial cell transistor
US-2022189961-A1 · Jun 16, 2022 · US
Compact and efficient cmos inverter
US-2022189829-A1 · Jun 16, 2022 · US
High density 3D magnetic random access memory (MRAM) cell integration using wafer cut and transfer
US-11342498-B2 · May 24, 2022 · US
Recent patents
Latest publications not already listed above.
DRAM with selective epitaxial transistor and buried bitline
US-11329048-B2 · May 10, 2022 · US
DRAM with selective epitaxial cell transistor
US-11302697-B2 · Apr 12, 2022 · US
Compact and efficient CMOS inverter
US-11302586-B2 · Apr 12, 2022 · US
Perpendicular magnetic tunnel junction memory cells having vertical channels
US-11222970-B2 · Jan 11, 2022 · US
Dram with selective epitaxial transistor and buried bitline
US-2021305256-A1 · Sep 30, 2021 · US
Compact and efficient cmos inverter
US-2021305105-A1 · Sep 30, 2021 · US
Dram with selective epitaxial cell transistor
US-2021233913-A1 · Jul 29, 2021 · US
Selector transistor with continuously variable current drive
US-2021217814-A1 · Jul 15, 2021 · US
Integration of epitaxially grown channel selector with two terminal resistive switching memory element
US-2021090626-A1 · Mar 25, 2021 · US
Integration of epitaxially grown channel selector with two terminal resistive switching memory element
US-10957370-B1 · Mar 23, 2021 · US
Integration of epitaxially grown channel selector with mram device
US-2021065760-A1 · Mar 4, 2021 · US
Integration of epitaxially grown channel selector with MRAM device
US-10937479-B1 · Mar 2, 2021 · US
Vertically-strained silicon device for use with a perpendicular magnetic tunnel junction (PMTJ)
US-10916582-B2 · Feb 9, 2021 · US
Fabricating Devices with Reduced Isolation Regions
US-2020409273-A1 · Dec 31, 2020 · US
Fabricating Sub-Lithographic Devices
US-2020409272-A1 · Dec 31, 2020 · US
Adjustable current selectors
US-10854260-B2 · Dec 1, 2020 · US
Flexible substrate for use with a perpendicular magnetic tunnel junction (PMTJ)
US-10790333-B2 · Sep 29, 2020 · US
Methods of fabricating dual threshold voltage devices
US-10770561-B2 · Sep 8, 2020 · US
Dual threshold voltage devices having a first transistor and a second transistor
US-10770510-B2 · Sep 8, 2020 · US
Shared bit line array architecture for magnetoresistive memory
US-10679685-B2 · Jun 9, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Spin Memory Inc | 51 |
| Integrated Silicon Solution Cayman Inc | 13 |
| Spin Transfer Tech Inc | 5 |
| Spin Memory Inc | 5 |
| Integrated Silicon Solution Cayman Inc | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10B61/22 | 55 |
| H01L27/228 | 45 |
| H10N50/01 | 42 |
| H10D30/025 | 36 |
| H10N50/10 | 36 |