Low-temperature deposition of high-quality aluminum nitride films for heat spreading applications
US-12557651-B2 · Feb 17, 2026 · US
This page is not indexed by search engines while we improve data quality.
Kazior Thomas E patents
Kazior Thomas E is listed as an inventor on 23 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Kazior Thomas E |
| Total patents | 23 |
| First publication | Mar 5, 2015 |
| Latest publication | Feb 17, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures
US-11784248-B2 · Oct 10, 2023 · US
Group iii-v semiconductor structures having crystalline regrowth layers and methods for forming such structures
US-2023073459-A1 · Mar 9, 2023 · US
Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures
US-11515410-B2 · Nov 29, 2022 · US
Group iii-v semiconductor structures having crystalline regrowth layers and methods for forming such structures
US-2022140126-A1 · May 5, 2022 · US
Electrode structure for field effect transistor
US-11239326-B2 · Feb 1, 2022 · US
Nitride structures having low capacitance gate contacts integrated with copper damascene structures
US-11177216-B2 · Nov 16, 2021 · US
Low-Temperature Deposition of High-Quality Aluminum Nitride Films for Heat Spreading Applications
US-2021249331-A1 · Aug 12, 2021 · US
Wafer structure with mode suppression
US-10930742-B2 · Feb 23, 2021 · US
Wafer structure with mode suppression
US-2020219982-A1 · Jul 9, 2020 · US
Recent patents
Latest publications not already listed above.
Nitride structures having low capacitance gate contacts integrated with copper damascene structures
US-2020083167-A1 · Mar 12, 2020 · US
Electrode structure for field effect transistor
US-2019237554-A1 · Aug 1, 2019 · US
Reconstituted wafer structure
US-2019165108-A1 · May 30, 2019 · US
Electrode structure for field effect transistor
US-2019097001-A1 · Mar 28, 2019 · US
Nitride structure having gold-free contact and methods for forming such structures
US-10224285-B2 · Mar 5, 2019 · US
Nitride structure having gold-free contact and methods for forming such structures
US-10096550-B2 · Oct 9, 2018 · US
Nitride structure having gold-free contact and methods for forming such structures
US-2018240753-A1 · Aug 23, 2018 · US
Nitride structure having gold-free contact and methods for forming such structures
US-2018240754-A1 · Aug 23, 2018 · US
Methods and structures for forming microstrip transmission lines on thin silicon carbide on insulator (SICOI) wafers
US-9761445-B2 · Sep 12, 2017 · US
Microwave integrated circuit (MMIC) damascene electrical interconnect for microwave energy transmission
US-9478508-B1 · Oct 25, 2016 · US
Methods and structures for forming microstrip transmission lines on thin silicon carbide on insulator (sicoi) wafers
US-2016211136-A1 · Jul 21, 2016 · US
Double heterojunction group III-nitride structures
US-9231064-B1 · Jan 5, 2016 · US
Method for reducing growth of non-uniformities and autodoping during column iii-v growth into dielectric windows
US-2015059640-A1 · Mar 5, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Raytheon Co | 23 |
| Univ California | 2 |
| Univ Leland Stanford Junior | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8503 | 16 |
| H10D62/85 | 16 |
| H10D30/015 | 14 |
| H10D64/0125 | 13 |
| H10D64/62 | 13 |