Electrode structure for field effect transistor

Patent metadata

Field	Value
Publication number	US-11239326-B2
Application number	US-201916381485-A
Country	US
Kind code	B2
Filing date	Apr 11, 2019
Priority date	Sep 25, 2017
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

A Field Effect Transistor (FET) structure having: a semiconductor; a first electrode structure; a second electrode structure; and a third electrode structure for controlling a flow of carriers in the semiconductor between the first electrode structure and the second electrode structure; a dielectric structure disposed over the semiconductor and extending horizontally between first electrode structure, the second electrode structure and the third electrode structure; and a fourth electrode passing into the dielectric structure and terminating a predetermined, finite distance above the semiconductor for controlling an electric field in the semiconductor under the fourth electrode structure.

First claim

What is claimed is:

1. A transistor structure, comprising:
a semiconductor;
a first electrode structure;
a second electrode structure;
a third electrode structure for controlling a flow of carriers in the semiconductor between the first electrode structure and the second electrode structure;
a dielectric structure having a first dielectric layer, a second dielectric layer and a third dielectric layer and a fourth dielectric layer, the dielectric structure disposed over the semiconductor and extending horizontally between first electrode structure, the second electrode structure and the third electrode structure; and
a fourth electrode structure passing into the dielectric structure extending through the first dielectric layer, the second dielectric layer and third dielectric layer and terminating a predetermined, finite distance above the semiconductor at the fourth dielectric layer.

2. The transistor structure recited in claim 1 wherein the fourth electrode structure is a field plate structure.

3. The transistor structure recited in claim 2 wherein the field plate structure is connected to the first electrode structure.

4. The transistor structure recited in claim 1 wherein the fourth electrode structure is connected to the first electrode structure.

5. The transistor structure recited in claim 1 wherein the first electrode structure and the fourth electrode structure are electrically isolated one from another.

6. The transistor structure recited in claim 1 wherein the first electrode structure, the second electrode structure and the fourth electrode structure are electrically isolated one from another.

7. The transistor structure recited in claim 1 wherein the first electrode structure and the second electrode structure are in Ohmic contact with the semiconductor.

8. The transistor structure recited in claim 2 wherein the first electrode structure and the second electrode structure are in Ohmic contact with the semiconductor.

9. The transistor structure recited in claim 3 wherein the first electrode structure and the second electrode structure are in Ohmic contact with the semiconductor.

10. A Field Effect Transistor (FET) structure, comprising:
a semiconductor;
a first dielectric structure disposed over the semiconductor;
a second dielectric structure having a first layer, a second layer and a third layer disposed on the first dielectric structure;
a source electrode and a drain electrode each having an upper electrical interconnect portion and a lower Ohmic contact portion in Ohmic contact with the semiconductor, the lower Ohmic contact portion passing vertically through the first dielectric structure to the semiconductor, the upper electrical interconnect portion passing vertically into the second dielectric structure to the lower Ohmic contact portion;
a gate electrode for controlling a flow of carriers in the semiconductor between the source electrode and the drain electrode, the gate electrode having an upper electrical interconnect portion and a lower portion in contact with the semiconductor, the upper electrical interconnect portion of the gate electrode passing vertically into the second dielectric structure to the lower portion of the gate electrode;
wherein a portion of the second dielectric structure extends horizontally between the gate electrode and the drain electrode; and
a field plate parallel to the upper electrical interconnect portion of the source electrode and the upper electrical interconnect portion of the drain electrode, and the upper electrical interconnect portion of the gate electrode, the field plate being disposed between the upper electrical interconnect portion of the drain electrode and the upper electrical interconnect portion of the gate electrode, the field plate having an upper, electrical interconnect portion electrically connected to the upper electrical interconnect portion of the source electrode, the upper electrical interconnect portion of the field plate passing vertically from the upper surface of the FET structure into the second dielectric structure and terminating at a lower portion of the field plate, the lower portion of the field plate being disposed a predetermined, finite distance from the semiconductor at the first dielectric structure.

11. The Field Effect Transistor (FET) recited in claim 10 wherein the first dielectric structure comprises an etch stop layer and wherein the lower portion of the field plate terminates at the etch stop layer.

12. The Field Effect Transistor (FET) recited in claim 10 wherein the first dielectric structure comprises an etch stop layer and wherein the lower portion of the field plate terminates at an upper surface of the first dielectric structure.

13. The Field Effect Transistor (FET) recited in claim 10 wherein: the second dielectric structure comprises an etch stop layer and wherein the lower portion of the field plate terminates within the second dielectric layer.

14. The Field Effect Transistor (FET) recited in claim 10 wherein the upper electrical interconnect portion of the source electrode, the upper electrical interconnect portion of the drain electrode and the upper electrical interconnect portion of the gate electrode each is a copper Damascene structure.

15. The Field Effect Transistor (FET) recited in claim 11 wherein the upper electrical interconnect portion of the field plate is electrically connected to the upper electrical interconnect portion of the source electrode through an interconnection structure and wherein the interconnection structure is a copper Damascene structure.

16. The Field Effect Transistor (FET) recited in claim 10 wherein: the lower portion of the field plate terminates on a metal layer disposed above the first dielectric structure layer.

17. The Field Effect Transistor (FET) recited in claim 16 wherein the upper, electrical interconnect portion of the field plate is electrically connected to the upper portion of the source electrode though an interconnection structure and wherein the interconnection portion is a copper Damascene structure.

18. The transistor structure recited in claim 1 wherein the first electrode structure, the second electrode structure, the third electrode structure and the fourth electrode structure are electrically isolated one from another.

19. The transistor structure recited in claim 18 wherein the first electrode structure is a source electrode structure, the second electrode structure is a drain electrode structure and the fourth electrode structure is an electrode structure for controlling an electric field in the semiconductor under the fourth electrode structure.

Assignees

• Raytheon Co

Inventors

• Laroche Jeffrey R
• Ip Kelly P
• Kazior Thomas E
• Alavi Kamal Tabatabaie

Classifications

• H10D64/257

  for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673) · CPC title

• H10D64/254

  for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D64/01324

  characterised by the sectional shape, e.g. T or inverted-T · CPC title

• H10D64/0125

  characterised by the sectional shape, e.g. T or inverted T · CPC title