Magnetoresistive memory device and method of operating same using phase controlled magnetic anisotropy
US-12592267-B2 · Mar 31, 2026 · US
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Kalitsov Alan patents
Kalitsov Alan is listed as an inventor on 54 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Kalitsov Alan |
| Total patents | 54 |
| First publication | Feb 6, 2018 |
| Latest publication | Mar 31, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer
US-12225828-B2 · Feb 11, 2025 · US
Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling
US-12211535-B2 · Jan 28, 2025 · US
Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling
US-12106790-B2 · Oct 1, 2024 · US
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
US-11889702-B2 · Jan 30, 2024 · US
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
US-11887640-B2 · Jan 30, 2024 · US
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
US-11871679-B2 · Jan 9, 2024 · US
Magnetoresistive memory device including a plurality of reference layers
US-11839162-B2 · Dec 5, 2023 · US
Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling
US-2023307027-A1 · Sep 28, 2023 · US
Magnetoresistive memory device and method of operating same using phase controlled magnetic anisotropy
US-2023307029-A1 · Sep 28, 2023 · US
Recent patents
Latest publications not already listed above.
Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling
US-2023307028-A1 · Sep 28, 2023 · US
Voltage controlled magnetic anisotropy (vcma) memory devices including platinum containing layer in contact with free layer
US-2023107190-A1 · Apr 6, 2023 · US
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
US-2022392953-A1 · Dec 8, 2022 · US
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
US-2022392505-A1 · Dec 8, 2022 · US
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
US-2022393100-A1 · Dec 8, 2022 · US
Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
US-11417379-B2 · Aug 16, 2022 · US
Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
US-11411170-B2 · Aug 9, 2022 · US
Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
US-11349066-B2 · May 31, 2022 · US
Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
US-2022130442-A1 · Apr 28, 2022 · US
Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
US-2022131068-A1 · Apr 28, 2022 · US
Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
US-2022131067-A1 · Apr 28, 2022 · US
Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US-11276446-B1 · Mar 15, 2022 · US
Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same
US-11271009-B2 · Mar 8, 2022 · US
Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US-2022069200-A1 · Mar 3, 2022 · US
Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US-2022068337-A1 · Mar 3, 2022 · US
Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US-11264562-B1 · Mar 1, 2022 · US
Magnetic device including multiferroic regions and methods of forming the same
US-11222920-B2 · Jan 11, 2022 · US
Tunneling metamagnetic resistance memory device and methods of operating the same
US-11200934-B2 · Dec 14, 2021 · US
Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same
US-11177284-B2 · Nov 16, 2021 · US
Tunneling metamagnetic resistance memory device and methods of operating the same
US-2021327484-A1 · Oct 21, 2021 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Western Digital Tech Inc | 32 |
| Sandisk Technologies Llc | 22 |
| Sandisk Technologies Inc | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| G11C11/161 | 42 |
| H10N50/10 | 42 |
| H10N50/85 | 38 |
| G11C11/1675 | 38 |
| H10B61/00 | 38 |