Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11411170-B2
Application number	US-202017081557-A
Country	US
Kind code	B2
Filing date	Oct 27, 2020
Priority date	Oct 27, 2020
Publication date	Aug 9, 2022
Grant date	Aug 9, 2022

Abstract

A magnetoresistive memory device includes a magnetic tunnel junction including a free layer, at least two tunneling dielectric barrier layers, and at least one metallic quantum well layer. The quantum well layer leads to the resonant electron tunneling through the magnetic tunnel junction in such a way that it strongly enhances the tunneling probability for one of the magnetization states of the free layer, while this tunneling probability remains much smaller in the opposite magnetization state of the free layer. The device can be configured in a spin transfer torque device configuration, a voltage-controlled magnetic anisotropy, a voltage controlled exchange coupling device configuration, or a spin-orbit-torque device configuration.

First claim

What is claimed is:

1. A method of forming a magnetoresistive memory device, comprising:
forming a first electrode over a substrate;
depositing a magnetic tunnel junction layer stack over the first electrode, wherein the magnetic tunnel junction layer stack comprises, from one side to another, a first texture-breaking nonmagnetic layer including a first nonmagnetic transition metal, a magnesium oxide first tunneling dielectric layer including grains having (001) texture, a reference layer including a first amorphous ferromagnetic material, a spinel second dielectric tunneling layer including an amorphous spinel material, a free layer including a second amorphous ferromagnetic material, a magnesium oxide third tunneling dielectric layer including grains having (001) texture, and a second texture-breaking nonmagnetic layer including a second nonmagnetic transition metal;
performing an anneal process to induce solid phase epitaxy crystallization of materials of the free layer, the second tunneling dielectric layer, and the reference layer using at least one of the first or the third tunneling dielectric layer as a crystallization template layer, to convert the amorphous spinel material of the second tunneling dielectric layer into polycrystalline spinel material having (001) texture along an axial direction that is perpendicular to an interface between the second tunneling dielectric layer and the free layer; and
forming a second electrode over a portion of the magnetic tunnel junction layer stack prior to or after the anneal process.

2. The method of claim 1 , wherein the solid phase epitaxy converts each of the reference layer and the free layer into polycrystalline iron or Heusler alloy ferromagnetic material layers having (001) texture.

3. The method of claim 2 , wherein the spinel material comprises Mg—Al—O x or MgAl 2 O 4 .

4. The method of claim 1 , wherein each of the first texture-breaking nonmagnetic layer and the second texture-breaking nonmagnetic layer blocks propagation of crystalline alignment of materials thereacross during the solid phase epitaxy crystallization.

Assignees

• Sandisk Technologies Llc

Inventors

• Kalitsov Alan
• Prasad Bhagwati
• Stewart Derek

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• H01L43/12

  Electricity · mapped topic

• H01L43/04

  Electricity · mapped topic

• H01L43/02 Primary

  Electricity · mapped topic