Gate all around device with a work function mismatch between inner and outer gates
US-2026013203-A1 · Jan 8, 2026 · US
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Hellings Geert patents
Hellings Geert is listed as an inventor on 37 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Hellings Geert |
| Total patents | 37 |
| First publication | Feb 24, 2015 |
| Latest publication | Jan 8, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
CFET Structure and Method of Fabricating a CFET Structure
US-2026006913-A1 · Jan 1, 2026 · US
Dynamic random access memory device having logic circuit integrated with memory cells and method of fabricating the same
US-2025386486-A1 · Dec 18, 2025 · US
Static random access memory device
US-2025386482-A1 · Dec 18, 2025 · US
Method for Forming an Integrated Circuit Device and an Integrated Circuit Device
US-2025331298-A1 · Oct 23, 2025 · US
Semiconductor devices including pin diodes and methods of forming the same
US-2025311444-A1 · Oct 2, 2025 · US
Ferroelectric memory device and method of non-destructively reading same
US-2025308571-A1 · Oct 2, 2025 · US
Method for Forming a Semiconductor Device, and a Semiconductor Device
US-2025280606-A1 · Sep 4, 2025 · US
Method for Producing Nanosheet Transistors
US-2025212504-A1 · Jun 26, 2025 · US
Complementary field effect transistor structures and methods of fabricating the same
US-2025204018-A1 · Jun 19, 2025 · US
Recent patents
Latest publications not already listed above.
Integrated Circuit Device
US-2025157914-A1 · May 15, 2025 · US
Nanosheet device
US-2024429274-A1 · Dec 26, 2024 · US
Nanostructure Comprising Nanosheet or Nanowire Transistors
US-2024371874-A1 · Nov 7, 2024 · US
Method for forming a bioFET sensor including semiconductor fin or nanowire
US-11735645-B2 · Aug 22, 2023 · US
Method for forming a fet device
US-2023178629-A1 · Jun 8, 2023 · US
Semiconductor Structure with an Epitaxial Layer Stack for Fabricating Back-side Contacts
US-2023025767-A1 · Jan 26, 2023 · US
Field-effect transistor-based biosensor
US-11391692-B2 · Jul 19, 2022 · US
FinFET having locally higher fin-to-fin pitch
US-11114435-B2 · Sep 7, 2021 · US
Method for Forming a Sensor
US-2021159321-A1 · May 27, 2021 · US
High voltage tolerant LDMOS
US-10680098-B2 · Jun 9, 2020 · US
Field-Effect Transistor-Based Biosensor
US-2020072788-A1 · Mar 5, 2020 · US
Co-fabricated gate-all-around field effect transistor and fin field effect transistor
US-10566434-B2 · Feb 18, 2020 · US
Breakdown-based physical unclonable function
US-10469083-B2 · Nov 5, 2019 · US
Semiconductor structures and method of forming same
US-2018233570-A1 · Aug 16, 2018 · US
Breakdown-based physical unclonable function
US-2018013431-A1 · Jan 11, 2018 · US
Method of forming a junction field effect transistor
US-9847336-B2 · Dec 19, 2017 · US
Finfet having locally higher fin-to-fin pitch
US-2017207217-A1 · Jul 20, 2017 · US
High voltage tolerant ldmos
US-2017194487-A1 · Jul 6, 2017 · US
Method of forming a junction field effect transistor
US-2017062431-A1 · Mar 2, 2017 · US
Electrostatic discharge protection
US-9391060-B2 · Jul 12, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Imec Vzw | 31 |
| Imec | 6 |
| Univ Leuven Kath | 5 |
| Globalfoundries Inc | 3 |
| Katholieke Univ Leuven Ku Leuven R & D | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D84/038 | 13 |
| H10D30/43 | 11 |
| H10D62/121 | 11 |
| H10D30/6735 | 10 |
| H10D30/6757 | 9 |