Systems and methods for fiber asset management
US-2026088896-A1 · Mar 26, 2026 · US
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Greene Brian patents
Greene Brian is listed as an inventor on 44 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Greene Brian |
| Total patents | 44 |
| First publication | Oct 3, 2017 |
| Latest publication | Mar 26, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Nanowire transistors and methods of fabrication
US-12568643-B2 · Mar 3, 2026 · US
Selective backside recessing of source and drain regions
US-12563810-B1 · Feb 24, 2026 · US
Backside processing of fins in fin based transistor devices
US-12543367-B2 · Feb 3, 2026 · US
Substrate-less lateral diode integrated circuit structures
US-12507475-B2 · Dec 23, 2025 · US
Integrated circuit structures having differentiated channel sizing
US-12501661-B2 · Dec 16, 2025 · US
Dipole threshold voltage tuning for high voltage transistor stacks
US-12471354-B2 · Nov 11, 2025 · US
Nanoribbon-based transistors with etch stop layer to assist subfin removal
US-2025324690-A1 · Oct 16, 2025 · US
Substrate-less silicon controlled rectifier (scr) integrated circuit structures
US-2025261452-A1 · Aug 14, 2025 · US
Substrate-free integrated circuit structures
US-2025254993-A1 · Aug 7, 2025 · US
Recent patents
Latest publications not already listed above.
Substrate-less silicon controlled rectifier (SCR) integrated circuit structures
US-12328947-B2 · Jun 10, 2025 · US
Substrate-free integrated circuit structures
US-12317590-B2 · May 27, 2025 · US
Substrate-less electrostatic discharge (ESD) integrated circuit structures
US-12166031-B2 · Dec 10, 2024 · US
Substrate-less vertical diode integrated circuit structures
US-12154898-B2 · Nov 26, 2024 · US
Buried low-k dielectric to protect source/drain to gate connection
US-2024334669-A1 · Oct 3, 2024 · US
Nanoribbon-based transistors with etch stop layer to assist subfin removal
US-2024290835-A1 · Aug 29, 2024 · US
Gate cut, and source and drain contacts
US-2024222447-A1 · Jul 4, 2024 · US
Integrated circuit structures with source or drain contacts having enhanced contact area
US-2024178273-A1 · May 30, 2024 · US
Wide channel diode structure including sub-fin
US-2024088132-A1 · Mar 14, 2024 · US
Gate-all-around integrated circuit structures including varactors
US-11869987-B2 · Jan 9, 2024 · US
Integrated circuit structures having differentiated channel sizing
US-2023317808-A1 · Oct 5, 2023 · US
Backside processing of fins in fin based transistor devices
US-2023307449-A1 · Sep 28, 2023 · US
Gate end cap and boundary placement in transistor structures for n-metal oxide semiconductor (n-mos) performance tuning
US-2023071699-A1 · Mar 9, 2023 · US
Substrate-less nanowire-based lateral diode integrated circuit structures
US-2022416022-A1 · Dec 29, 2022 · US
Substrate-less lateral diode integrated circuit structures
US-2022415925-A1 · Dec 29, 2022 · US
Substrate-less silicon controlled rectifier (scr) integrated circuit structures
US-2022415881-A1 · Dec 29, 2022 · US
Gate-all-around integrated circuit structures including varactors
US-2022344519-A1 · Oct 27, 2022 · US
Gate-all-around integrated circuit structures including varactors
US-11417781-B2 · Aug 16, 2022 · US
Substrate-less vertical diode integrated circuit structures
US-2022199615-A1 · Jun 23, 2022 · US
Dipole threshold voltage tuning for high voltage transistor stacks
US-2022199472-A1 · Jun 23, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 33 |
| Globalfoundries Inc | 10 |
| Level 3 Communications Llc | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/121 | 30 |
| H10D84/038 | 22 |
| H10D30/6735 | 20 |
| H10D30/43 | 20 |
| H10D30/6757 | 18 |