Semiconductor device and data storage system including the same
US-12588496-B2 · Mar 24, 2026 · US
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Ahn Jongseon patents
Ahn Jongseon is listed as an inventor on 30 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Ahn Jongseon |
| Total patents | 30 |
| First publication | Dec 1, 2016 |
| Latest publication | Mar 24, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Semiconductor device and electronic system including the same
US-2025344388-A1 · Nov 6, 2025 · US
Semiconductor devices
US-2025089252-A1 · Mar 13, 2025 · US
Semiconductor devices and data storage systems including the same
US-2025017018-A1 · Jan 9, 2025 · US
Vertical memory device
US-2024276719-A1 · Aug 15, 2024 · US
Semiconductor device, electronic system including the same, and method of fabricating the same
US-2024130123-A1 · Apr 18, 2024 · US
Vertical memory device
US-2024090219-A1 · Mar 14, 2024 · US
Semiconductor device
US-2024074193-A1 · Feb 29, 2024 · US
Three-dimensional semiconductor memory device and electronic system including the same
US-2024074192-A1 · Feb 29, 2024 · US
Semiconductor device and data storage system including the same
US-2024038659-A1 · Feb 1, 2024 · US
Recent patents
Latest publications not already listed above.
Semiconductor devices and data storage systems including the same
US-2023380164-A1 · Nov 23, 2023 · US
Three-dimensional memory device including a string selection line gate electrode having a silicide layer
US-11792994-B2 · Oct 17, 2023 · US
Three-dimensional semiconductor memory devices having a source structure that overlaps a buried insulating layer
US-11616078-B2 · Mar 28, 2023 · US
Semiconductor device with reduced vertical height
US-11563023-B2 · Jan 24, 2023 · US
Semiconductor devices
US-11515322-B2 · Nov 29, 2022 · US
Vertical semiconductor devices
US-11450610-B2 · Sep 20, 2022 · US
Three-dimensional memory device including a string selection line gate electrode having a silicide layer
US-2022246624-A1 · Aug 4, 2022 · US
Three-dimensional semiconductor memory device
US-11404434-B2 · Aug 2, 2022 · US
Three-dimensional memory device including a string selection line gate electrode having a silicide layer
US-11374017-B2 · Jun 28, 2022 · US
Three-dimensional semiconductor memory devices
US-2021384220-A1 · Dec 9, 2021 · US
Three-dimensional semiconductor memory devices having source structure overlaps buried insulating layer
US-11114461-B2 · Sep 7, 2021 · US
Semiconductor devices
US-2021098483-A1 · Apr 1, 2021 · US
Three-dimensional memory device including a string selection line gate electrode having a silicide layer
US-2021091093-A1 · Mar 25, 2021 · US
Vertical semiconductor devices
US-2021043568-A1 · Feb 11, 2021 · US
Three-dimensional semiconductor memory device
US-2021036010-A1 · Feb 4, 2021 · US
Semiconductor device and manufacturing method of the same
US-2020402997-A1 · Dec 24, 2020 · US
Three-dimensional semiconductor memory devices
US-2020350330-A1 · Nov 5, 2020 · US
Method of manufacturing semiconductor device
US-2018025937-A1 · Jan 25, 2018 · US
Method of manufacturing semiconductor device
US-9799551-B2 · Oct 24, 2017 · US
Method of manufacturing semiconductor device
US-2016351445-A1 · Dec 1, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Samsung Electronics Co Ltd | 30 |
Top CPC classifications
Most common classification codes across this inventor's patents.