Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
US-12520551-B2 · Jan 6, 2026 · US
of breakdown diodes
of breakdown diodes · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D8/021 |
| Official title | {of breakdown diodes} |
| Display label | of breakdown diodes |
| Total patents | 57 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 2 |
| 2016 | 4 |
| 2017 | 4 |
| 2018 | 2 |
| 2019 | 4 |
| 2020 | 5 |
| 2021 | 7 |
| 2022 | 8 |
| 2023 | 5 |
| 2024 | 11 |
| 2025 | 4 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Vertical device triggered silicon control rectifier
US-2025344515-A1 · Nov 6, 2025 · US
Electrostatic discharge semiconductor device and manufacturing method thereof
US-2025331310-A1 · Oct 23, 2025 · US
Vertical device triggered silicon control rectifier
US-12336302-B1 · Jun 17, 2025 · US
Wafer-level chip scale package transient voltage suppression diode device
US-2025113508-A1 · Apr 3, 2025 · US
Recess poly esd diode for power mosfet
US-2024421147-A1 · Dec 19, 2024 · US
Semiconductor Device and Method of Manufacture
US-2024395797-A1 · Nov 28, 2024 · US
Semiconductor device
US-12113059-B2 · Oct 8, 2024 · US
Low capacitance transient voltage suppressor protection device
US-2024321863-A1 · Sep 26, 2024 · US
Low capacitance transient voltage suppressor with a mos-triggered silicon controlled rectifier as high-side steering diode
US-12021075-B2 · Jun 25, 2024 · US
Semiconductor protection device
US-12002890-B2 · Jun 4, 2024 · US
Structure with buried doped region and methods to form same
US-2024170531-A1 · May 23, 2024 · US
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
US-2024063269-A1 · Feb 22, 2024 · US
Semiconductor device
US-2024021602-A1 · Jan 18, 2024 · US
Feeder design with high current capability
US-11869940-B2 · Jan 9, 2024 · US
Bi-directional bi-polar device for ESD protection
US-11862735-B2 · Jan 2, 2024 · US
Low capacitance transient voltage suppressor with a mos-triggered silicon controlled rectifier as high-side steering diode
US-2023260986-A1 · Aug 17, 2023 · US
Low capacitance transient voltage suppressor including a punch-through silicon controlled rectifier as low-side steering diode
US-11664368-B2 · May 30, 2023 · US
Feeder design with high current capability
US-2023147611-A1 · May 11, 2023 · US
Feeder design with high current capability
US-11575007-B2 · Feb 7, 2023 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D8/021?
- CPC H10D8/021 is the Cooperative Patent Classification code for “of breakdown diodes.”
- How many patents are filed under CPC H10D8/021 (of breakdown diodes)?
- Our database includes 57 publications tagged with this CPC code.
- Is patent activity under CPC H10D8/021 growing?
- Publication counts under this code: 11 in 2024 vs 4 in 2025 (latest complete years).