Feeder design with high current capability

Patent metadata

Field	Value
Publication number	US-11869940-B2
Application number	US-202318150611-A
Country	US
Kind code	B2
Filing date	Jan 5, 2023
Priority date	Sep 15, 2017
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

A feeder design is manufactured as a structure in a SiC semiconductor material comprising at least two p-type grids in an n-type SiC material ( 3 ), comprising at least one epitaxially grown p-type region, wherein an Ohmic contact is applied on the at least one epitaxially grown p-type region, wherein an epitaxially grown n-type layer is applied on at least a part of the at least two p-type grids and the n-type SiC material ( 3 ) wherein the at least two p-type grids ( 4, 5 ) are applied in at least a first and a second regions at least close to the at least first and second corners respectively and that there is a region in the n-type SiC material ( 3 ) between the first and a second regions without any grids.

First claim

The invention claimed is:

1. A semiconductor device, comprising:
an n-type substrate;
an n-type drift layer disposed on the n-type substrate;
a first n-type SiC layer disposed on the n-type drift layer;
a p-type grid disposed in the first n-type SiC layer;
a p-type region disposed on the first n-type SiC layer; and
a second n-type SiC layer disposed in contact with the first n-type SiC layer and the p-type region; and
an ohmic contact disposed in contact with the p-type region.

2. The semiconductor device of claim 1 , wherein the p-type region, the first n-type SiC layer, and the ohmic contact form a PiN diode.

3. The semiconductor device of claim 1 , wherein opposing edges of the p-type region overlap with at least a portion of the p-type grid.

4. The semiconductor device of claim 1 , wherein a top surface of the p-type grid is coplanar with a top surface of the first n-type SiC layer, and
wherein one of:
the top surface of the p-type grid contacts a lower surface of the p-type region;
the top surface of the p-type grid is spaced apart from a lower surface of the p-type region by portions of the second n-type SiC layer; and
the top surface of the p-type grid is spaced apart from a lower surface of the p-type region by an entirety of the second n-type SiC layer.

5. The semiconductor device of claim 4 , wherein the top surface of the p-type grid contacts opposing edges of the lower surface of the p-type region.

6. The semiconductor device of claim 1 ,
wherein a top surface of the p-type grid is spaced apart from a top surface of the first n-type SiC layer, and
wherein a bottom surface of the p-type grid is spaced apart from a bottom surface of the first n-type SiC layer.

7. The semiconductor device of claim 1 , wherein at least a portion of the Ohmic contact is disposed in the second n-type SiC layer.

8. The semiconductor device of claim 1 ,
wherein a projection of the p-type region in a first plane parallel with a surface of the n-type substrate has a boundary line limiting the projection of the p-type region,
wherein the p-type grid is disposed so that a projection of the p-type grid in a second plane parallel with the surface of the n-type substrate is within a surrounding of the boundary line, and
wherein a distance from the boundary line to any point in the surrounding is a maximum of 0.5 μm.

9. The semiconductor device of claim 1 , wherein a distance, along a direction perpendicular from a surface of the n-type substrate, from a lower part of the p-type region to an upper part of the p-type grid is in a range of 0 μm to 5 μm.

10. The semiconductor device of claim 1 , wherein the p-type grid includes an upper part comprising epitaxial growth and a lower part comprising ion implantation.

11. The semiconductor device of claim 1 , wherein the semiconductor device is one of a MOSFET, a JFET, a JBS diode, and an insulated-gate bipolar transistor (IGBT).

12. The semiconductor device of claim 1 , wherein at least one of the p-type region and the ohmic contact comprises tapered sidewalls.

13. A PiN diode device comprising:
a drift layer disposed on a substrate;
a first SiC layer having a first conductivity type disposed on the drift layer;
a SiC region having a second conductivity type disposed on the first SiC layer;
a SiC grid having the second conductivity type disposed in the first SiC layer;
a second SiC layer having the first conductivity type disposed in contact with the first SiC layer and the SiC region; and
an Ohmic contact disposed in contact with the SiC region,
wherein opposing edges of the SiC region overlap with portions of the SiC grid.

14. The device of claim 13 , wherein a top surface of the SiC grid is coplanar with a top surface of the first SiC layer, and
wherein one of:
the top surface of the SiC grid contacts a lower surface of the SiC region;
the top surface of the SiC grid is spaced apart from a lower surface of the SiC region by portions of the second SiC layer; and
the top surface of the SiC grid is spaced apart from a lower surface of the SiC region by an entirety of the second SiC layer.

15. The device of claim 14 , wherein the top surface of the SiC grid contacts opposing edges of the lower surface of the SiC region.

16. The device of claim 13 ,
wherein a top surface of the SiC grid is spaced apart from a top surface of the first SiC layer, and
wherein a bottom surface of the SiC grid is spaced apart from a bottom surface of the first SiC layer.

17. The device of claim 13 , wherein at least a portion of the Ohmic contact is disposed in the second SiC layer.

18. The device of claim 13 ,
wherein a projection of the SiC region in a first plane parallel with a surface of the substrate has a boundary line limiting the projection of the SiC region,
wherein the SiC grid is disposed so that a projection of the SiC grid in a second plane parallel with the surface of the substrate is within a surrounding of the boundary line, and
wherein a distance from the boundary line to any point in the surrounding is a maximum of 0.5 μm.

19. The device of claim 18 , wherein a distance, along a direction perpendicular from a surface of the, from a lower part of the SiC region to an upper part of the SiC grid is in a range of 0 μm to 5 μm.

20. The device of claim 13 , wherein the SiC grid includes an upper part comprising epitaxial growth and a lower part comprising ion implantation.

21. A diode device comprising:
a first n-type SiC layer on a drift layer over a substrate;
a p-type SiC region on the first n-type SiC layer;
a second n-type SiC layer in contact with the first n-type SiC layer and the p-type SiC region; and
an Ohmic contact in contact with the p-type SiC region,
wherein a p-type SiC grid is disposed in the first n-type SiC layer, and
wherein opposing edges of the p-type SiC region overlap with at least a portion of the p-type SiC grid.

Assignees

• Ii Vi Delaware Inc

Inventors

• Elahipanah Hossein
• Thierry-Jebali Nicolas
• Schoner Adolf
• Reshanov Sergey

Classifications

• H10D8/60

  Schottky-barrier diodes · CPC title

• H10D62/106 Primary

  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions · CPC title

• H10D8/021

  of breakdown diodes · CPC title

• H10D8/20

  Breakdown diodes, e.g. avalanche diodes · CPC title

• H10D8/051

  of Schottky diodes · CPC title