Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells
US-2024380401-A1 · Nov 14, 2024 · US
Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
Resistance change memory devices, e.g. resistive RAM [ReRAM] devices · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10B63/00 |
| Official title | Resistance change memory devices, e.g. resistive RAM [ReRAM] devices |
| Display label | Resistance change memory devices, e.g. resistive RAM [ReRAM] devices |
| Total patents | 813 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 35 |
| 2016 | 45 |
| 2017 | 45 |
| 2018 | 54 |
| 2019 | 68 |
| 2020 | 68 |
| 2021 | 83 |
| 2022 | 76 |
| 2023 | 86 |
| 2024 | 100 |
| 2025 | 126 |
| 2026 | 27 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
GaSbGe PHASE CHANGE MEMORY MATERIALS
US-2016372661-A1 · Dec 22, 2016 · US
Memory devices having electrodes comprising nanowires
US-9525131-B2 · Dec 20, 2016 · US
Rram devices and methods
US-2016365512-A1 · Dec 15, 2016 · US
Rram device
US-2016351806-A1 · Dec 1, 2016 · US
Semiconductor device with variable resistance switch and programming method therefor
US-9508432-B2 · Nov 29, 2016 · US
Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
US-9490012-B2 · Nov 8, 2016 · US
High density resistive random access memory (RRAM)
US-9484535-B1 · Nov 1, 2016 · US
Transparent resistive random access memory cells
US-9482920-B2 · Nov 1, 2016 · US
High density resistive random access memory (rram)
US-2016307964-A1 · Oct 20, 2016 · US
Apparatuses and operation methods associated with resistive memory cell arrays with separate select lines
US-2016276409-A1 · Sep 22, 2016 · US
Non-volatile resistance-switching thin film devices
US-9425393-B2 · Aug 23, 2016 · US
Non volatile resistive memory cell and its method of making
US-2016197271-A1 · Jul 7, 2016 · US
Memory device and method of manufacturing the same
US-9373785-B2 · Jun 21, 2016 · US
Inorganic light emitting memory and method for producing the same
US-2016155940-A1 · Jun 2, 2016 · US
Forming memristors on imaging devices
US-9331278-B2 · May 3, 2016 · US
Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
US-9318430-B2 · Apr 19, 2016 · US
Transparent Resistive Random Access Memory Cells
US-2016097945-A1 · Apr 7, 2016 · US
High density resistive random access memory (RRAM)
US-9305974-B1 · Apr 5, 2016 · US
Resistive memory devices
US-2016086664-A1 · Mar 24, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10B63/00?
- CPC H10B63/00 is the Cooperative Patent Classification code for “Resistance change memory devices, e.g. resistive RAM [ReRAM] devices.”
- How many patents are filed under CPC H10B63/00 (Resistance change memory devices, e.g. resistive RAM [ReRAM] devices)?
- Our database includes 813 publications tagged with this CPC code.
- Is patent activity under CPC H10B63/00 growing?
- Publication counts under this code: 100 in 2024 vs 126 in 2025 (latest complete years).