Memory devices having electrodes comprising nanowires

Patent metadata

Field	Value
Publication number	US-9525131-B2
Application number	US-201414537670-A
Country	US
Kind code	B2
Filing date	Nov 10, 2014
Priority date	Apr 5, 2007
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.

First claim

What is claimed is:

1. A memory device, comprising:
a first electrode comprising:
a conductive pad; and
a generally conical catalytic structure having a base and a tip, the base of the generally conical catalytic structure coupled to the conductive pad; and

only a single nanowire extending from the tip of the generally conical catalytic structure, wherein an effective cross-sectional area of the tip is sized to facilitate formation of only the single nanowire thereon.

2. The memory device of claim 1 , wherein the conductive pad comprises at least a portion of an elongated laterally extending conductive trace.

3. The memory device of claim 1 , further comprising:
a substrate disposed next to the conductive pad; and
a volume of variable resistance material coupled to an end of the single nanowire opposite the generally conical catalytic structure.

4. The memory device of claim 3 , further comprising a second electrode disposed on a side of the volume of variable resistance material opposite the single nanowire.

5. The memory device of claim 1 , wherein the single nanowire comprises a nanotube.

6. The memory device of claim 1 , wherein the single nanowire comprises a substantially solid nanowire.

7. The memory device of claim 1 , wherein the single nanowire is coupled to the conductive pad through the generally conical catalytic structure.

8. The memory device of claim 1 , wherein the first electrode is coupled to a conductive line via electrical contacts.

9. The memory device of claim 1 , wherein the generally conical catalytic structure consists of a catalyst material.

Assignees

• Micron Technology Inc

Inventors

• Liu Jun
• Violette Michael P

Classifications

• H01L27/2463

  Electricity · mapped topic

• H01L27/2409

  Electricity · mapped topic

• H01L45/1273

  Electricity · mapped topic

• H01L45/1253 Primary

  Electricity · mapped topic

• H01L45/146

  Electricity · mapped topic