Forming memristors on imaging devices

Patent metadata

Field	Value
Publication number	US-9331278-B2
Application number	US-201414169375-A
Country	US
Kind code	B2
Filing date	Jan 31, 2014
Priority date	Oct 31, 2013
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.

First claim

What is claimed is:

1. A method of forming a printhead with a memristor, comprising:
forming a printhead body comprising a first conductive material;
forming a third conductive material on the first conductive material;
forming a memory with the printhead body by:
forming a switching oxide material on the first conductive material via thermal oxidation of the first conductive material and the third conductive material; and

forming a second conductive material on the switching oxide material, wherein the first and the third conductive materials comprise a first electrode of the memory and the second conductive material comprises a second electrode of the memory.

2. The method of claim 1 , wherein the thermal oxidation includes performing a furnace oxidation process.

3. The method of claim 1 , wherein the thermal oxidation includes performing a rapid thermal processing method.

4. The method of claim 1 , wherein forming the memory comprises etching the switching oxide material and the second conductive material.

5. The method of claim 1 , further comprising implementing, via the memory, a bank of memory bits to store identification information and provide authentication.

6. A method of forming a printhead with a memristor, comprising:
forming a printhead body by depositing a first conductive material on a number of materials and a third conductive material on the first conductive material; and
forming a memory on the printhead body, wherein the memory includes the first conductive material and the third conductive material as a first electrode, a second conductive material as a second electrode, and a switching oxide material formed by plasma oxidation of the first conductive material and the third conductive material, between the first and second conductive materials.

7. The method of claim 6 , wherein forming the printhead body further includes depositing a doped substrate material, a gate oxide material, and a polysilicon material, and wherein the gate oxide material is deposited between the doped substrate material and the polysilicon material.

8. The method of claim 7 , wherein forming the printhead body further includes depositing a dielectric material between the doped substrate material and the first conductive material.

9. The method of claim 8 , wherein forming the printhead body further includes depositing a fourth conductive material, and wherein the dielectric material is deposited between the doped substrate material and the fourth conductive material.

10. The method of claim 9 , wherein the switching oxide material includes a ternary oxide.

11. A method of forming a printhead with a memristor, comprising:
depositing a gated oxide material on a number of materials and etching away portions of the gated oxide material and the number of materials;
performing a doping process to provide conductive doped regions adjacent to the etched gated oxide material;
depositing a first conductive material on the gated oxide material and the number of materials and a third conductive material on the first conductive material; and
forming a memristor on the first conductive material and the third conductive material, by performing ozone oxidation on the first and the third conductive material to form a switching oxide material, and depositing a second conductive material on the switching oxide material,
wherein the first and the third conductive materials are a bottom electrode of the memristor and the second conductive material is a top electrode of the memristor.

12. The method of claim 11 , further comprising depositing lightly doped drains adjacent to the conductive doped regions.

13. The method of claim 11 , wherein the switching oxide material includes a quaternary oxide.

14. The method of claim 13 , wherein the quaternary oxide includes a tantalum aluminum copper oxide.

15. The method of claim 11 , wherein the switching oxide material includes a binary oxide.

Assignees

• Hewlett Packard Development Co

Inventors

• Yang Jianhua
• Ge Ning
• Li Zhiyong
• Zhang Minxian Max

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• B41J2/14016

  Structure of bubble jet print heads · CPC title

• B41J2/1601

  Production of bubble jet print heads (B41J2/1606, B41J2/162 take precedence) · CPC title

• B41J2/1626

  etching · CPC title

• B41J2/14129

  Layer structure · CPC title