Methods of forming bottom dielectric isolation layers
US-2025056871-A1 · Feb 13, 2025 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/154 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 25 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2016 | 4 |
| 2017 | 3 |
| 2018 | 6 |
| 2019 | 2 |
| 2020 | 4 |
| 2022 | 1 |
| 2023 | 2 |
| 2024 | 2 |
| 2025 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Methods of forming bottom dielectric isolation layers
US-12170230-B2 · Dec 17, 2024 · US
Semiconductor devices including localized semiconductor-on-insulator (soi) regions
US-2024371943-A1 · Nov 7, 2024 · US
Source drain formation in gate all around transistor
US-2023067331-A1 · Mar 2, 2023 · US
Methods of forming bottom dielectric isolation layers
US-2023037719-A1 · Feb 9, 2023 · US
Method for making superlattice structures with reduced defect densities
US-11430869-B2 · Aug 30, 2022 · US
Method for making superlattice structures with reduced defect densities
US-2020411645-A1 · Dec 31, 2020 · US
Method for making superlattice structures with reduced defect densities
US-10811498-B2 · Oct 20, 2020 · US
Cascade tunneling field effect transistors
US-10763367-B2 · Sep 1, 2020 · US
Method for making superlattice structures with reduced defect densities
US-2020075731-A1 · Mar 5, 2020 · US
Cascade Tunneling Field Effect Transistors
US-2019348536-A1 · Nov 14, 2019 · US
Methods of forming substrate structures and semiconductor components
US-10388736-B2 · Aug 20, 2019 · US
Nitride semiconductor element and nitride semiconductor package
US-2018337041-A1 · Nov 22, 2018 · US
Semiconductor device including a superlattice and replacement metal gate structure and related methods
US-10084045-B2 · Sep 25, 2018 · US
Nitride semiconductor element and nitride semiconductor package
US-10062565-B2 · Aug 28, 2018 · US
Nitride semiconductor element and nitride semiconductor package
US-2018158678-A1 · Jun 7, 2018 · US
Nitride semiconductor element and nitride semiconductor package
US-9905419-B2 · Feb 27, 2018 · US
Methods of Forming Substrate Structures and Semiconductor Components
US-2018047813-A1 · Feb 15, 2018 · US
Semiconductor device including a superlattice and replacement metal gate structure and related methods
US-2017301757-A1 · Oct 19, 2017 · US
Substrate structure, semiconductor component and method
US-2017271454-A1 · Sep 21, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/154?
- CPC H01L29/154 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/154 (Electricity)?
- Our database includes 25 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/154 growing?
- Publication counts under this code: 2 in 2024 vs 1 in 2025 (latest complete years).