Thin film transistor, method of manufacturing the same and liquid crystal display apparatus having the same
US-2016380113-A1 · Dec 29, 2016 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/02694 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 410 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 26 |
| 2016 | 66 |
| 2017 | 96 |
| 2018 | 52 |
| 2019 | 41 |
| 2020 | 40 |
| 2021 | 20 |
| 2022 | 20 |
| 2023 | 25 |
| 2024 | 11 |
| 2025 | 11 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Silicon-germanium FinFET device with controlled junction
US-9514997-B2 · Dec 6, 2016 · US
Embedded gallium-nitride in silicon
US-2016351394-A1 · Dec 1, 2016 · US
Contact structure and extension formation for iii-v nfet
US-2016343585-A1 · Nov 24, 2016 · US
Silicon carbide substrate and method for producing silicon carbide substrate
US-2016343570-A1 · Nov 24, 2016 · US
Method for forming group iii/v conformal layers on silicon substrates
US-2016343811-A1 · Nov 24, 2016 · US
Integrated tensile strained silicon nfet and compressive strained silicon-germanium pfet implemented in finfet technology
US-2016329253-A1 · Nov 10, 2016 · US
Seed layer structure for growth of iii-v materials on silicon
US-2016322225-A1 · Nov 3, 2016 · US
Low Defect Relaxed SiGe/Strained Si Structures on Implant Anneal Buffer/Strain Relaxed Buffer Layers with Epitaxial Rare Earth Oxide Interlayers and Methods to Fabricate Same
US-2016322221-A1 · Nov 3, 2016 · US
Silicon single crystal wafer, manufacturing method thereof and method of detecting defects
US-2016315020-A1 · Oct 27, 2016 · US
Method of manufacturing silicon carbide semiconductor device
US-9466675-B2 · Oct 11, 2016 · US
Low temperature nanowire growth on arbitrary substrates
US-2016268131-A1 · Sep 15, 2016 · US
Semiconductor device and manufacturing method of semiconductor device
US-2016268371-A1 · Sep 15, 2016 · US
Reducing or eliminating pre-amorphization in transistor manufacture
US-2016268133-A1 · Sep 15, 2016 · US
Manufacturing method of semiconductor device
US-2016268130-A1 · Sep 15, 2016 · US
Depression filling method and processing apparatus
US-2016240379-A1 · Aug 18, 2016 · US
Vertical Gate All Around (VGAA) Devices and Methods of Manufacturing the Same
US-2016240378-A1 · Aug 18, 2016 · US
Method of manufacturing semiconductor device, substrate processing apparatus, gas supply system, and recording medium
US-9412587-B2 · Aug 9, 2016 · US
System and method for substrate wafer back side and edge cross section seals
US-2016225622-A1 · Aug 4, 2016 · US
Single-crystal silicon carbide substrate, method for producing single-crystal silicon carbide substrate, and method for inspecting single-crystal silicon carbide substrate
US-2016218003-A1 · Jul 28, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/02694?
- CPC H01L21/02694 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/02694 (Electricity)?
- Our database includes 410 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/02694 growing?
- Publication counts under this code: 11 in 2024 vs 11 in 2025 (latest complete years).