Magnetic device and memory device
US-11217288-B2 · Jan 4, 2022 · US
Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01F10/324 |
| Official title | {Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer} |
| Display label | Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer |
| Total patents | 84 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 1 |
| 2016 | 4 |
| 2017 | 9 |
| 2018 | 7 |
| 2019 | 9 |
| 2020 | 21 |
| 2021 | 8 |
| 2022 | 14 |
| 2023 | 3 |
| 2024 | 4 |
| 2025 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Magnetoresistance effect element
US-11183630-B2 · Nov 23, 2021 · US
Magnetic sensing devices based on interlayer exchange-coupled magnetic thin films
US-2021270914-A1 · Sep 2, 2021 · US
Magnetic memory device
US-11074951-B2 · Jul 27, 2021 · US
Magnetoresistance effect element
US-11018293-B2 · May 25, 2021 · US
Magnetoresistance effect device
US-10984938-B2 · Apr 20, 2021 · US
Magnetic sensor
US-10983181-B2 · Apr 20, 2021 · US
Magnetoresistance effect element
US-2021028355-A1 · Jan 28, 2021 · US
Film strain sensor configuration including a processor
US-10883815-B2 · Jan 5, 2021 · US
Spin torque device
US-2020395532-A1 · Dec 17, 2020 · US
Method of producing a magnetic structure
US-10854223-B2 · Dec 1, 2020 · US
Magnetoresistance effect element
US-10825985-B2 · Nov 3, 2020 · US
Magnetic memory device
US-2020302988-A1 · Sep 24, 2020 · US
Magnetic device and memory device
US-2020302987-A1 · Sep 24, 2020 · US
Magnetoresistance effect element
US-2020251268-A1 · Aug 6, 2020 · US
Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
US-10665375-B2 · May 26, 2020 · US
Magnetoresistance effect element
US-2020161539-A1 · May 21, 2020 · US
Magnetoresistance effect element
US-2020152862-A1 · May 14, 2020 · US
Magnetic sensor
US-2020132786-A1 · Apr 30, 2020 · US
Spin current assisted magnetoresistance effect device
US-10636466-B2 · Apr 28, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01F10/324?
- CPC H01F10/324 is the Cooperative Patent Classification code for “Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer.”
- How many patents are filed under CPC H01F10/324 (Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer)?
- Our database includes 84 publications tagged with this CPC code.
- Is patent activity under CPC H01F10/324 growing?
- Publication counts under this code: 4 in 2024 vs 4 in 2025 (latest complete years).