Magnetic memory device
US-2020302988-A1 · Sep 24, 2020 · US
Magnetic memory device
US11074951B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11074951-B2 |
| Application number | US-201916568102-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 11, 2019 |
| Priority date | Mar 20, 2019 |
| Publication date | Jul 27, 2021 |
| Grant date | Jul 27, 2021 |
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- Title
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- Abstract
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- First independent claim
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- CPC / IPC classifications
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Abstract
Official abstract text for this publication.
According to one embodiment, a magnetic memory device includes a magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer contains nickel (Ni), cobalt (Co), manganese (Mn) and gallium (Ga) and has a spin polarization less than 0.71.
First claim
Opening claim text (preview).
What is claimed is: 1. A magnetic memory device comprising: a magnetoresistive element comprising: a first magnetic layer having a variable magnetization direction; a second magnetic layer having a fixed magnetization direction; and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer contains nickel (Ni), cobalt (Co), manganese (Mn), and gallium (Ga), and wherein when a ratio of a nickel (Ni) composition ratio to a cobalt (Co) composition ratio in the first magnetic layer is set to (1−x)/x, a value of x is higher than 0.42 and less than 0.45 or higher than 0.95 and less than 1.00. 2. The device of claim 1 , wherein the magnetoresistive element is a spin transfer torque (STT) magnetoresistive element. 3. The device of claim 1 , wherein the magnetoresistive element has perpendicular magnetization.
Assignees
Inventors
Classifications
Materials of the active region · CPC title
- H10N50/10Primary
Magnetoresistive devices · CPC title
- G11C11/161Primary
details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title
Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title
Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer · CPC title
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Frequently asked questions
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- What does patent US11074951B2 cover?
- According to one embodiment, a magnetic memory device includes a magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer contains nickel (Ni), cobalt (Co), manganese …
- Who is the assignee on this patent?
- Toshiba Memory Corp
- What technology area does this patent fall under?
- Primary CPC classification H10N50/10. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 27 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).