Magnetoresistance effect element

Patent metadata

Field	Value
Publication number	US-11018293-B2
Application number	US-202016739521-A
Country	US
Kind code	B2
Filing date	Jan 10, 2020
Priority date	Mar 31, 2015
Publication date	May 25, 2021
Grant date	May 25, 2021

Abstract

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB2Ox (0<x≤4), and has a spinel structure in which cations are arranged in a disordered manner, the tunnel barrier layer has a lattice-matched portion and a lattice-mismatched portion, A is a divalent cation of plural non-magnetic elements, B is an aluminum ion, and in the composition formula, the number of the divalent cation is smaller than half the number of the aluminum ion.

First claim

The invention claimed is:

1. A magnetoresistance effect element comprising:
a first ferromagnetic metal layer;
a second ferromagnetic metal layer; and
a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers,

wherein the tunnel barrier layer is expressed by a composition formula of AB 2 O x (0<x≤4),
A is a divalent cation,
B is a trivalent cation, and
the tunnel barrier layer is formed on the first ferromagnetic metal layer by depositing a metal film and oxidizing the metal film, and

a temperature of a substrate, on which the first ferromagnetic metal layer is formed, is set in a range of −70° C. to −30° C. before oxidizing the metal film.

2. The magnetoresistance effect element according to claim 1 ,
wherein the tunnel barrier layer has a structure in which cations are arranged in a disordered manner.

3. The magnetoresistance effect element according to claim 1 ,
wherein the tunnel barrier layer has a lattice-matched portion that is lattice-matched with both of the first ferromagnetic metal layer and the second ferromagnetic metal layer, and a lattice-mismatched portion that is not lattice-matched with at least one of the first ferromagnetic metal layer and the second ferromagnetic metal layer.

4. The magnetoresistance effect element according to claim 3 ,
wherein a volume ratio of the lattice-matched portion with respect to a volume of the entire tunnel barrier layer is 65% to 95%.

5. The magnetoresistance effect element according to claim 1 ,
wherein A is a divalent cation of plural non-magnetic elements,
B is an aluminum ion, and
in the composition formula, the number of the divalent cation is smaller than half the number of the aluminum ion.

6. The magnetoresistance effect element according to claim 5 ,
wherein the divalent cation of the non-magnetic element is in a proportion of 15% to 42.5% with respect to the aluminum ion.

7. The magnetoresistance effect element according to claim 5 ,
wherein an element having the largest ionic radius among elements included in the divalent cation of the non-magnetic element is included in a proportion of 12.5% to 90% in the divalent cation of the non-magnetic element.

8. The magnetoresistance effect element according to claim 1 ,
wherein the tunnel barrier layer has a cubic structure as a basic structure.

9. The magnetoresistance effect element according to claim 1 ,
wherein in the non-magnetic element, the divalent cation is any one selected from the group consisting of Mg, Zn, Cd, Ag, Pt, and Pb.

10. The magnetoresistance effect element according to claim 1 ,
wherein the first ferromagnetic metal layer has larger coercivity than the second ferromagnetic metal layer.

11. The magnetoresistance effect element according to claim 1 ,
wherein at least one of the first ferromagnetic metal layer and the second ferromagnetic metal layer has magnetic anisotropy perpendicular to a stacking direction.

12. The magnetoresistance effect element according to claim 1 ,
wherein at least one of the first ferromagnetic metal layer and the second ferromagnetic metal layer is Co 2 Mn 1-a Fe a Al b Si 1-b (0≤a≤1, 0≤b≤1).

13. The magnetoresistance effect element according to claim 1 ,
wherein the divalent cation of the non-magnetic element is in a proportion of 7.5% to 37.5% with respect to the aluminum ion.

14. The magnetoresistance effect element according to claim 1 ,
wherein a size of a film surface of the lattice-matched portion of the tunnel barrier layer in a direction parallel thereto is 30 nm or less.

15. The magnetoresistance effect element according to claim 1 ,
wherein the tunnel barrier layer has a film thickness of 1.7 nm to 3.0 nm.

16. A method of manufacturing a magnetoresistance effect element according to claim 1 , the method comprising the steps of:
forming a first ferromagnetic metal layer on a substrate;
forming a tunnel barrier layer on the first ferromagnetic layer by depositing a metal film and oxidizing the deposited metal film; and
forming a second ferromagnetic metal layer on the tunnel barrier layer, wherein
oxidization is performed after cooling the substrate in a range of −70° C. to −30° C. in the step of forming a tunnel barrier layer.

17. The method of manufacturing a magnetoresistance effect element according to claim 16 , wherein
the first ferromagnetic metal layer is formed on an underlayer provided on the substrate.

18. The method of manufacturing a magnetoresistance effect element according to claim 17 , wherein the underlayer is a nitride layer having a (001)-oriented NaCl structure and containing at least one element selected from the group consisting of Ti, Zr, Nb, V, Hf, Ta, Mo, W, B, Al, and Ce.

19. The method of manufacturing a magnetoresistance effect element according to claim 17 , wherein
the underlayer is a (002)-oriented perovskite conductive oxide layer made of RTO 3 , R being at least one element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba; and T being at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, 1 r , Ta, Ce, and Pb.

20. The method of manufacturing a magnetoresistance effect element according to claim 17 , wherein the underlayer is an oxide layer having a (001)-oriented NaCl structure and containing at least one element selected from the group consisting of Mg, Al, and Ce.

Assignees

• Tdk Corp

Inventors

• Sasaki Tomoyuki

Classifications

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10D48/40

  Devices controlled by magnetic fields · CPC title

• H01F10/324

  Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title