Magnetic sensor

Patent metadata

Field	Value
Publication number	US-10983181-B2
Application number	US-201916407234-A
Country	US
Kind code	B2
Filing date	May 9, 2019
Priority date	Oct 24, 2018
Publication date	Apr 20, 2021
Grant date	Apr 20, 2021

Abstract

A magnetic sensor whose output characteristic is less sensitive to the environmental temperature is provided. Magnetic sensor 1 has free layer 24 whose magnetization direction changes in response to an external magnetic field, pinned layer 22 whose magnetization direction is fixed with respect to the external magnetic field, spacer layer 23 that is located between pinned layer 22 and free layer 24 and that exhibits a magnetoresistance effect, and at least one magnet film 25 that is disposed on a lateral side of free layer 24 and that applies a bias magnetic field to free layer 24. A relationship of 0.7 ≤T C_HM /T C_FL ≤1.05 is satisfied, where T C_HM is Curie temperature of the magnet film, and T C_FL is Curie temperature of the free layer.

First claim

What is claimed is:

1. A magnetic sensor comprising:
a free layer whose magnetization direction changes in response to an external magnetic field;
a pinned layer whose magnetization direction is fixed with respect to the external magnetic field;
a spacer layer that is located between the pinned layer and the free layer and that exhibits a magnetoresistance effect; and
at least one magnet film that is disposed on a lateral side of the free layer and that applies a bias magnetic field to the free layer, wherein
a relationship of 0.7≤T C_HM /T C_FL ≤0.9 is satisfied, where T C_HM (K) is a Curie temperature of the magnet film, and T C_FL (K) is a Curie temperature of the free layer, and
a thickness of the magnet film is between 35 and 50 nm.

2. The magnetic sensor according to claim 1 , wherein an average grain diameter of magnetic grains that forms the magnetic film is 10 nm or more and 50 nm or less, as seen from a direction in which the free layer, the spacer layer and the outer pinned layer are stacked.

3. The magnetic sensor according to claim 1 , wherein the at least one magnet film is a pair of magnet films that are located on both lateral sides of the free layer, and the free layer has a rectangular shape having short sides that face the pair of magnet films, as seen from a direction in which the free layer, the spacer layer and the pinned layer are stacked.

4. The magnetic sensor according to claim 1 , wherein a ratio of a product of saturated magnetization and a film thickness of the magnet film to a product of saturated magnetization and a film thickness of the free layer is two or more and four or less.

5. A magnetic sensor comprising:
a free layer whose magnetization direction changes in response to an external magnetic field;
a pinned layer whose magnetization direction is fixed with respect to the external magnetic field;
a spacer layer that is located between the pinned layer and the free layer and that exhibits a magnetoresistance effect; and
at least one magnet film that is disposed on a lateral side of the free layer and that applies a bias magnetic field to the free layer, wherein
a relationship of 0.7≤T C_HM /T C_FL ≤0.9 is satisfied, where T C_HM (K) is a Curie temperature of the magnet film, and T C_FL (K) is a Curie temperature of the free layer,
the magnet film is mainly formed of CoPt, FePt or SmCo, and
the magnet film further contains one or more elements selected from the group consisting of Cr, Ta, B, Ni, Ti, W, V, Mo, Mn, Zr, Nb, Hf, Si, Cu, Ag, Al, Ru and Rh.

6. A magnetic sensor comprising:
a free layer whose magnetization direction changes in response to an external magnetic field;
a pinned layer whose magnetization direction is fixed with respect to the external magnetic field;
a spacer layer that is located between the pinned layer and the free layer and that exhibits a magnetoresistance effect; and
at least one magnet film that is disposed on a lateral side of the free layer and that applies a bias magnetic field to the free layer,
wherein a relationship of 0.7≤T HK=0 HM /T C_FL ≤1.05 is satisfied, where T HK=0 HM (K) is a temperature of the magnet film at which an anisotropic magnetic field thereof becomes zero, and T C FL (K) is Curie temperature of the free layer,
wherein the magnet film is mainly formed of CoPt, FePt or SmCo and further contains one or more elements selected from the group consisting of Cr, Ta, B, Ni, Ti, W, V, Mo, Mn, Zr, Nb, Hf, Si, Cu, Ag, Al, Ru and Rh.

Assignees

• Tdk Corp

Inventors

• Takano Kenichi
• Saito Yuta
• Hirabayashi Hiraku

Classifications

• H10N50/85

  Materials of the active region · CPC title

• G01R33/0082

  Compensation, e.g. compensating for temperature changes · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• G01R33/0094

  Sensor arrays · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title