Magnetoresistance effect element

Patent metadata

Field	Value
Publication number	US-11183630-B2
Application number	US-202016748884-A
Country	US
Kind code	B2
Filing date	Jan 22, 2020
Priority date	Dec 11, 2015
Publication date	Nov 23, 2021
Grant date	Nov 23, 2021

Abstract

A magnetoresistance effect element is provided in which a MR ratio is not likely to decrease even at a high bias voltage. A magnetoresistance effect element according to an aspect of the present invention includes: a first ferromagnetic metal layer; a second ferromagnetic metal layer; a tunnel barrier layer that is provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer, in which the tunnel barrier layer is formed of a non-magnetic oxide having a cubic crystal structure represented by a compositional formula A1-xA′xO, where A represents a divalent cation, and A′ represents a trivalent cation, and the number of A ions is more than the number of A′ ions in a primitive lattice of the crystal structure.

First claim

What is claimed is:

1. A magnetoresistance effect element, comprising:
a first ferromagnetic metal layer;
a second ferromagnetic metal layer; and
a tunnel barrier layer that is provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer,
wherein:
the tunnel barrier layer is formed of a non-magnetic oxide having a cubic crystal structure represented by a compositional formula A 1-x A′ x O, where A represents a divalent cation, A′ represents a trivalent cation, and x satisfies 0<x<0.5,
predetermined ions are substituted with ions having a different ionic radius from that of the predetermined ions in the cubic crystal structure; and
a number of A ions is more than a number of A′ ions in a primitive lattice of the cubic crystal structure.

2. The magnetoresistance effect element according to claim 1 , wherein A in the compositional formula represents at least one selected from a group consisting of beryllium, magnesium, and zinc.

3. The magnetoresistance effect element according to claim 1 , wherein A′ in the compositional formula represents at least one selected from a group consisting of boron, aluminum, and gallium.

4. The magnetoresistance effect element according to claim 1 , wherein
A′ in the compositional formula represents boron, and
x in the compositional formula satisfies 0.05<x≤0.2.

5. The magnetoresistance effect element according to claim 1 , wherein
A′ in the compositional formula represents aluminum, and x in the compositional formula satisfies 0<x<0.5.

6. The magnetoresistance effect element according to claim 1 , wherein
A′ in the compositional formula represents gallium, and
x in the compositional formula satisfies 0<x<0.5.

7. A magnetoresistance effect element, comprising:
a first ferromagnetic metal layer;
a second ferromagnetic metal layer; and
a tunnel barrier layer that is provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer,
wherein:
the tunnel barrier layer is formed of a non-magnetic oxide having a cubic crystal structure represented by a compositional formula A 1-x A′ x O, where A represents at least one divalent cation selected from the group consisting of beryllium, magnesium, and zinc, A′ represents at least one trivalent cation selected from the group consisting of boron, aluminum, and gallium, and x satisfies 0<x<0.5,
predetermined ions are substituted with ions having a different ionic radius from that of the predetermined ions in the cubic crystal structure; and
a number of A ions is more than a number of A′ ions in a primitive lattice of the cubic crystal structure.

8. The magnetoresistance effect element according to claim 1 , wherein the cubic crystal structure is a structure distorted from a NaCl crystal structure.

9. The magnetoresistance effect element according to claim 1 , wherein:
the divalent cation represented by A and the trivalent cation represented by A′ occupy sites in the cubic crystal structure that correspond to sites occupied by Mg 2+ in a crystal structure of MgO; and
the divalent cation represented by A is substituted with the trivalent cation represented by A′ in the sites in the cubic crystal structure that correspond to the sites occupied by Mg 2+ in the crystal structure of MgO.

10. The magnetoresistance effect element according to claim 1 , wherein the divalent cation represented by A is substituted with the trivalent cation represented by A′ in sites in the cubic crystal structure.

11. The magnetoresistance effect element according to claim 7 , wherein the cubic crystal structure is a structure distorted from a NaCl crystal structure.

12. The magnetoresistance effect element according to claim 7 , wherein:
the divalent cation represented by A and the trivalent cation represented by A′ occupy sites in the cubic crystal structure that correspond to sites occupied by Mg 2+ in a crystal structure of MgO; and
the divalent cation represented by A is substituted with the trivalent cation represented by A′ in the sites in the cubic crystal structure that correspond to the sites occupied by Mg 2+ in the crystal structure of MgO.

13. The magnetoresistance effect element according to claim 7 , wherein the divalent cation represented by A is substituted with the trivalent cation represented by A′ in sites in the cubic crystal structure.

Assignees

• Tdk Corp

Inventors

• Sasaki Tomoyuki

Classifications

• G11B5/3909 Primary

  Arrangements using a magnetic tunnel junction · CPC title

• H10N50/85 Primary

  Materials of the active region · CPC title

• G11C2029/5602

  Interface to device under test · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11C2029/5002

  Characteristic · CPC title