Magnetic device and memory device

Patent metadata

Field	Value
Publication number	US-11217288-B2
Application number	US-201916566472-A
Country	US
Kind code	B2
Filing date	Sep 10, 2019
Priority date	Mar 18, 2019
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.

First claim

What is claimed is:

1. A magnetic device comprising:
a first magnetic material provided above a substrate;
a second magnetic material provided between the substrate and the first magnetic material;
a nonmagnetic material provided between the first magnetic material and the second magnetic material;
a first layer provided between the substrate and the second magnetic material and including an amorphous layer;
a second layer provided between the amorphous layer and the second magnetic material and including a first crystal layer; and
a third layer provided between the first layer and the second layer and including a second crystal layer having tantalum.

2. The magnetic device according to claim 1 , wherein the second magnetic material includes a first magnetic layer, a second magnetic layer between the first magnetic layer and the second layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer.

3. The magnetic device according to claim 1 , wherein the second magnetic material has an SAF structure.

4. The magnetic device according to claim 1 , wherein the amorphous layer includes a boride layer.

5. The magnetic device according to claim 1 , wherein the first crystal layer includes one of ruthenium, rhodium, palladium, osmium, iridium, and platinum.

6. The magnetic device according to claim 1 , wherein a thickness of the amorphous layer is equal to or thicker than a sum of a thickness of the second layer and a thickness of the crystal third layer.

7. The magnetic device according to claim 1 , wherein a thickness of the second crystal layer is 0.5 nm or more and 2 nm or less.

8. The magnetic device according to claim 1 , wherein a thickness of the first crystal layer is 1 nm or more and 2 nm or less.

9. A memory device comprising:
a memory cell including a magnetic device, the magnetic device including:
a first magnetic material provided above a substrate;
a second magnetic material provided between the substrate and the first magnetic material;
a nonmagnetic material provided between the first magnetic material and the second magnetic material;
a first layer provided between the substrate and the second magnetic material and including an amorphous layer;
a second layer provided between the amorphous layer and the second magnetic material and including a first crystal layer; and
a third layer provided between the first layer and the second layer and including a second crystal layer having tantalum; and

a control circuit configured to control an operation of the memory cell and provided on the substrate.

10. The memory device according to claim 9 , wherein the second magnetic material includes a first magnetic layer, a second magnetic layer between the first magnetic layer and the second layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer.

11. The memory device according to claim 9 , wherein the second magnetic material has an SAF structure.

12. The memory device according to claim 9 , wherein the amorphous layer includes a boride layer.

13. The memory device according to claim 9 , wherein the first crystal layer includes one of ruthenium, rhodium, palladium, osmium, iridium, and platinum.

14. The memory device according to claim 9 , wherein a thickness of the amorphous layer is equal to or thicker than a sum of a thickness of the second layer and a thickness of the third layer.

15. The memory device according to claim 9 , wherein a thickness of the second crystal layer is 0.5 nm or more and 2 nm or less.

16. The memory device according to claim 9 , wherein a thickness of the first crystal layer is 1 nm or more and 2 nm or less.

17. The magnetic device according to claim 1 , wherein:
the amorphous layer comprises boride, and
the first crystal layer comprises one of platinum and ruthenium.

18. The memory device according to claim 9 , wherein:
the amorphous layer comprises boride, and
the first crystal layer comprises one of platinum and ruthenium.

Assignees

• Toshiba Memory Corp

Inventors

• Sawada Kazuya
• Eeh Young Min
• Oikawa Tadaaki
• Yoshino Kenichi
• Kitagawa Eiji
• Isoda Taiga

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H01F10/324

  Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01F10/28

  characterised by the composition of the substrate · CPC title

• H01F10/3218

  Exchange coupling of magnetic films via an antiferromagnetic interface (H01F10/3268 takes precedence) · CPC title