Spin torque device

Patent metadata

Field	Value
Publication number	US-2020395532-A1
Application number	US-202016887247-A
Country	US
Kind code	A1
Filing date	May 29, 2020
Priority date	May 29, 2019
Publication date	Dec 17, 2020
Grant date	—

Abstract

Described is a spin torque device, and a spintronics device Incorporating the spin torque device. The spin torque device comprises a magnetic layer having a switchable magnetisation direction along a first axis, and a spin source layer adapted to generate a spin current from a current Injected along a second axis perpendicular to the first axis. Electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the magnetic layer to produce spin torque to switch the magnetisation direction.

First claim

1 . A spin torque device comprising:
a reference magnetic layer (“reference layer”); a magnetic layer having a switchable magnetisation direction along a first axis (“free layer”); a non-magnetic layer between the reference layer and the free layer; and a spin source layer adapted to generate a spin current from a current Injected along a second axis perpendicular to the first axis,
wherein electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the free layer to produce spin torque to switch the switchable magnetisation direction.

2 . A spin torque device of claim 1 , wherein the angle is a canting angle of out-of-plane spin and the canting angle is selected to correspond with a predetermined switching polarity.

3 . A spin torque device of claim 2 , wherein the canting angle is selected to correspond with a predetermined switching current density.

4 . A spin torque device of claim 2 , wherein the canting angle is selected to correspond with a predetermined switching time.

5 . A spin torque device of claim 1 , wherein the spin source layer is an antiferromagnetic layer.

6 . A spin torque device of claim 5 , wherein the antiferromagnetic layer is non-collinear or collinear.

7 . A spin torque device of claim 5 , wherein the antiferromagnetic layer is one of (001), (010), (111), (011), (110) and (100) oriented.

8 . A spin torque device of claim 5 , wherein the antiferromagnetic layer is iridium-manganese compounds.

9 . A spin torque device of claim 5 , wherein the antiferromagnetic layer is between about 1 nm to about 20 nm thick.

10 . A spin torque device of claim 9 , wherein the antiferromagnetic layer is about 8 nm thick.

11 . A spin torque device of claim 5 , wherein the spin source layer exhibits broken crystalline Inversion symmetry.

12 . A spin torque device of claim 11 , wherein the spin source layer is arranged to receive the current along a low-symmetry or lack-of-symmetry axis.

13 . A spin torque device of claim 11 , wherein the spin source layer is formed from tungsten-telluride compounds.

14 . A spin torque device of claim 1 , wherein the spin source layer produces out-of-plane spin accumulation when the current is an in-plane charge current.

15 . A spin torque device of claim 1 , forming a stack comprising a capping layer, the free layer being between the spin source layer and capping layer.

16 . A spin torque device of claim 14 , wherein the capping layer is a magnesium-oxide/silicon-dioxide layer.

17 . A spin torque device of claim 1 , wherein the free layer exhibits perpendicular magnetic anisotropy.

18 . A spin torque device of claim 17 , wherein the free layer is formed from one of:
a ferromagnetic material comprising at least one of Fe, Co, Ni, alloys of one or more of Fe, Co, Ni, and CoFeB alloy; a ferrimagnetic material comprising at least one of CoPd, CoTb, FeCoTb, FeCoGd, and CoGd alloys, and the multilayers [C/Tb] n , [Co/Pd] n and [Co/Gd] n ; a ferromagnetic or ferrimagnetic Insulator comprising YIG; or a two-dimensional magnetic material comprising at least one of FeGeTe compounds and VSe 2 .

19 . A spintronics device comprising:
a magnetic layer having a switchable magnetisation direction along a first axis, a first surface and opposite second surface (“free layer”); a spin source layer adapted to generate a spin current from a current Injected along a second axis perpendicular to the first axis, the first surface being adjacent the spin source layer, a fixed layer; and a non-magnetic layer disposed between the fixed layer and the free layer,
wherein electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the free layer to produce spin torque to switch the magnetisation direction.

20 . A spintronics device of claim 19 , wherein the non-magnetic layer is sandwiched between the free layer and the fixed layer, the spintronics device further comprising a capping layer adjacent the fixed layer.

Assignees

• Nat Univ Singapore

Inventors

• Cai Kaiming
• Liu Yang
• Shi Shuyuan
• Yang Hyunsoo

Classifications

• G11C11/18

  using Hall-effect devices · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H01F10/324

  Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title