Process for manufacturing synthetic single crystal diamond material using a pressure driven growth process and a plurality of seed pads with each seed pad comprising a plurality of single crystal diamond seeds
US-10370773-B2 · Aug 6, 2019 · US
Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00)
Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B9/00 |
| Official title | Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) |
| Display label | Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) |
| Total patents | 75 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 14 |
| 2016 | 16 |
| 2017 | 16 |
| 2018 | 10 |
| 2019 | 8 |
| 2020 | 3 |
| 2021 | 4 |
| 2024 | 2 |
| 2025 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Single-crystal diamond material, single-crystal diamond chip, and perforated tool
US-2019218685-A1 · Jul 18, 2019 · US
Method and apparatus for producing crystalline cladding and crystalline core optical fibers
US-10274673-B2 · Apr 30, 2019 · US
METHOD FOR MANUFACTURING SINGLE-CRYSTAL SiC, AND HOUSING CONTAINER
US-2019010629-A1 · Jan 10, 2019 · US
System and method for producing group 13 nitride crystals comprised of growth vessels stacked within inner vessels placed over support tables with a central rotating shaft and revolving shafts attached to the support tables
US-10138570-B2 · Nov 27, 2018 · US
Optical quality diamond material
US-10125434-B2 · Nov 13, 2018 · US
Diamond grains, method for making same and mixture comprising same
US-10047455-B2 · Aug 14, 2018 · US
Method for producing nitride crystal
US-10041186-B2 · Aug 7, 2018 · US
Method and apparatus for producing crystalline cladding and crystalline core optical fibers
US-2018203183-A1 · Jul 19, 2018 · US
Method and apparatus for producing crystalline cladding and crystalline core optical fibers
US-9995875-B2 · Jun 12, 2018 · US
Method for separating group 13 element nitride layer, and composite substrate
US-9960316-B2 · May 1, 2018 · US
Method for producing gallium nitride crystal by reacting metal gallium and iron nitride
US-9890471-B2 · Feb 13, 2018 · US
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
US-9869033-B2 · Jan 16, 2018 · US
Crystal growth apparatus and manufacturing method of group III nitride crystal
US-9856575-B2 · Jan 2, 2018 · US
Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same
US-9768352-B2 · Sep 19, 2017 · US
Method for Separating Group 13 Element Nitride Layer, and Composite Substrate
US-2017263810-A1 · Sep 14, 2017 · US
Method and Apparatus for Producing Group-13-Element Nitride Crystals
US-2017260644-A1 · Sep 14, 2017 · US
Single-crystal diamond material, single-crystal diamond chip, and perforated tool
US-2017241042-A1 · Aug 24, 2017 · US
Group 13 nitride crystal and group 13 nitride crystal substrate
US-9732435-B2 · Aug 15, 2017 · US
SiC single-crystal ingot, SiC single crystal, and production method for same
US-9732436-B2 · Aug 15, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B9/00?
- CPC C30B9/00 is the Cooperative Patent Classification code for “Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00).”
- How many patents are filed under CPC C30B9/00 (Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00))?
- Our database includes 75 publications tagged with this CPC code.
- Is patent activity under CPC C30B9/00 growing?
- Publication counts under this code: 2 in 2024 vs 2 in 2025 (latest complete years).