System and method for producing group 13 nitride crystals comprised of growth vessels stacked within inner vessels placed over support tables with a central rotating shaft and revolving shafts attached to the support tables

Patent metadata

Field	Value
Publication number	US-10138570-B2
Application number	US-201715604819-A
Country	US
Kind code	B2
Filing date	May 25, 2017
Priority date	Nov 26, 2014
Publication date	Nov 27, 2018
Grant date	Nov 27, 2018

Abstract

A crystal growth apparatus includes a pressure-resistant vessel; a plurality of support tables arranged inside the pressure-resistant vessel; inner vessels each placed over the support tables, respectively; growth vessels contained the inner vessels, respectively; a heating means for heating the growth vessels; and a central rotating shaft connected to the support tables. The central rotating shaft is distant from central axes of the inner vessels, respectively. A seed crystal, a raw material of the Group 13 element and a flux are charged in each of the growth vessels, and the growth vessels are heated to form a melt and a nitrogen-containing gas is supplied to the melt to grow a crystal of a nitride of said Group 13 element while the central rotating shaft is rotated.

First claim

The invention claimed is:

1. A crystal growth apparatus comprising:
a pressure-resistant vessel;
a plurality of support tables arranged inside said pressure-resistant vessel;
inner vessels placed over said support tables, respectively;
growth vessels contained in said inner vessels, respectively;
a heating means for heating said growth vessels;
a central rotating shaft connected to said support tables and revolving shafts attached to said support tables, respectively,
wherein said central rotating shaft is distant from central axes of said inner vessels,
wherein a seed crystal, a raw material of a Group 13 element and a flux are charged in each of said growth vessels, and wherein said growth vessels are heated to form a melt and a nitrogen-containing gas is supplied to said melt to grow a crystal of a nitride of said Group 13 element on said seed crystal while said central rotating shaft is rotated,
wherein said revolving shafts are configured to revolve while said crystal of said nitride of said Group 13 element is grown,
wherein distances between said revolving shafts and said central rotating shafts are equal to one another,
wherein said central axes of said inner vessels are arranged at positions which are point symmetrical with respect to said central rotating shaft, and
wherein said growth vessels are stacked in each of said inner vessels.

2. The apparatus of claim 1 , wherein a number of said inner vessels is three or more.

3. The apparatus of claim 1 further comprising a heating vessel provided with said heating means, said heating vessel being arranged inside said pressure-resistant vessel and containing said inner vessels.

4. A crystal growth method of growing a crystal of a nitride of a Group 13 element, said method using a crystal growth apparatus, said crystal growth apparatus comprising:
a pressure-resistant vessel;
a plurality of support tables arranged inside said pressure-resistant vessel;
inner vessels placed over said support tables, respectively;
growth vessels contained in said inner vessels, respectively;
a heating means for heating said growth vessels;
a central rotating shaft connected to said support tables, and
revolving shafts attached to said support tables, respectively,
wherein said central rotating shaft is distant from central axes of said inner vessels,
wherein said revolving shafts are configured to revolve while said crystal of said nitride of said Group 13 element is grown,
wherein distances between said revolving shafts and said central rotating shaft are equal to one another,
wherein said central axes of said inner vessels are arranged at positions which are point symmetrical with respect to said central rotating shaft,
wherein said growth vessels are stacked in each of said inner vessels, the method comprising the steps of
charging a seed crystal, a raw material of said Group 13 element and a flux in each of said growth vessels; and
heating said growth vessels to form a melt and supplying a nitrogen-containing gas to said melt to grow said crystal of said nitride of said Group 13 element while said central rotating shaft is rotated.

5. The method of claim 4 , wherein a number of said inner vessels is three or more.

6. The method of claim 4 , wherein said apparatus further comprises a heating vessel provided with said heating means, said heating vessel being arranged inside said pressure-resistant vessel and containing said inner vessels.

Assignees

• Ngk Insulators Ltd

Inventors

• Yoshino Takashi
• Imai Katsuhiro
• Shimodaira Takanao
• Wada Takashi

Classifications

• C30B9/10

  Metal solvents · CPC title

• C30B9/12

  Salt solvents, e.g. flux growth · CPC title

• C30B29/406

  Gallium nitride · CPC title

• C30B9/06

  using as solvent a component of the crystal composition · CPC title

• C30B9/00 Primary

  Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) · CPC title