Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate

Patent metadata

Field	Value
Publication number	US-9869033-B2
Application number	US-201514619237-A
Country	US
Kind code	B2
Filing date	Feb 11, 2015
Priority date	Jun 9, 1999
Publication date	Jan 16, 2018
Grant date	Jan 16, 2018

Abstract

A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.

First claim

What is claimed is:

1. A method of producing a group III nitride crystal in a reaction vessel pressurized to a higher pressure than that of a surrounding, said method comprising the steps of:
forming a mixed melt comprising a group III metal element and an alkali metal element in the reaction vessel;
disposing a seed crystal in the reaction vessel;
supplying a nitrogen source of nitrogen or a compound containing nitrogen to the reaction vessel, the nitrogen source causing a reaction with the mixed melt and forming the group III nitride crystal; and
growing the group III nitride crystal on an outer side of the seed crystal.

2. The method of producing a group III nitride crystal as claimed in claim 1 , wherein the step of growing causes the group III nitride crystal to grow in an outward direction from a center of said seed crystal to outward of said seed crystal.

3. The method of producing a group III nitride crystal as claimed in claim 1 , wherein the step of growing causes the group III nitride crystal to grow at least in a direction parallel to a vapor-melt interface.

4. The method of producing a group III nitride crystal as claimed in claim 1 , wherein the seed crystal has a shape of a slab.

Assignees

• Ricoh Co Ltd

Inventors

• Sarayama Seiji
• Shimada Masahiko
• Yamane Hisanori
• Iwata Hirokazu

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• C30B9/00 Primary

  Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) · CPC title

• C30B15/00

  Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) · CPC title

• C30B29/406

  Gallium nitride · CPC title

• Y10T117/1092

  Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger] · CPC title