Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same

Patent metadata

Field	Value
Publication number	US-9768352-B2
Application number	US-201615359813-A
Country	US
Kind code	B2
Filing date	Nov 23, 2016
Priority date	Dec 18, 2013
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

First claim

What is claimed is:

1. A self-supporting polycrystalline gallium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate,
wherein crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on a substrate surface are distributed with various tilt angles from the specific crystal orientation, wherein an average tilt angle thereof is 1 to 10°, and
wherein an aspect ratio T/D T , which is defined as a ratio of a thickness T of the self-supporting polycrystalline gallium nitride substrate to a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate, is preferably 0.7 or greater.

2. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein no less than 80% of the gallium nitride-based single crystal grains subjected to inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis have a tilt angle within a range of 1 to 10°.

3. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein the tilt angle of the gallium nitride-based single crystal grains is distributed according to Gaussian distribution.

4. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , having a defect density of 1×10 4 defects/cm 2 or less.

5. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , having a defect density of 1×10 2 defects/cm 2 or less.

6. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , having a single crystal structure in the direction approximately normal to the substrate.

7. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate connect to a bottom surface of the self-supporting polycrystalline gallium nitride substrate without intervention of a grain boundary.

8. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate is different from a cross-sectional average diameter D B at an outermost surface of the gallium nitride-based single crystal grains exposed at a bottom surface of the self-supporting polycrystalline gallium nitride substrate.

9. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein a ratio D T /D B is greater than 1.0, which is a ratio of a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate to a cross-sectional average diameter D B at an outermost surface of the gallium nitride-based single crystal grains exposed at a bottom surface of the self-supporting polycrystalline gallium nitride substrate.

10. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein the gallium nitride-based single crystal grains have a cross-sectional average diameter of 10 μm or greater at an outermost surface of the substrate.

11. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , having a thickness of 20 μm or greater.

12. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , having a diameter of 50.8 mm or greater.

13. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein the gallium nitride-based single crystal grains are doped with an n-type dopant or a p-type dopant.

14. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein the gallium nitride-based single crystal grains are free from a dopant.

15. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein the gallium nitride-based single crystal grains are made of a mixed crystal.

16. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein the gallium nitride-based single crystal grains constituting the self-supporting polycrystalline gallium nitride substrate are crystallographically non-oriented in a direction parallel to the plate surface, which is perpendicular to the direction normal to the substrate.

17. The self-supporting polycrystalline gallium nitride substrate according to claim 1 , wherein the aspect ratio T/D T is 1.0 or greater.

18. A light emitting device comprising:
the self-supporting polycrystalline gallium nitride substrate according to claim 1 ; and
a light emitting functional layer formed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in a direction approximately normal to the substrate.

Assignees

• Ngk Insulators Ltd

Inventors

• Watanabe Morimichi
• Yoshikawa Jun
• Kuraoka Yoshitaka
• Nanataki Tsutomu

Classifications

• C30B9/12 Primary

  Salt solvents, e.g. flux growth · CPC title

• H01L33/0025

  Electricity · mapped topic

• H01L33/06

  Electricity · mapped topic

• C30B25/20

  the substrate being of the same materials as the epitaxial layer · CPC title

• C30B25/18

  characterised by the substrate · CPC title