Method for separating group 13 element nitride layer, and composite substrate

Patent metadata

Field	Value
Publication number	US-9960316-B2
Application number	US-201715609704-A
Country	US
Kind code	B2
Filing date	May 31, 2017
Priority date	Dec 3, 2014
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0≤(an average thickness (μm) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)≤10.0 . . . (1); 0.1≤ a warpage (mm) of said composite substrate×(50/a diameter (mm) of said composite substrate) 2 ≤0.6 . . . (2); 1.10≤a maximum value (μm) of a thickness of said layer of said nitride of said group 13 element/a minimum value (μm) of said thickness of said layer of said nitride of said group 13 element . . . (3)

First claim

The invention claimed is:

1. A method of separating a layer of a nitride of a group 13 element: the method comprising the steps of;
preparing a composite substrate comprising a sapphire substrate and said layer of said nitride of said group 13 element provided on said sapphire substrate, said layer of said nitride of said group 13 element comprising gallium nitride, aluminum nitride or gallium aluminum nitride, and said composite substrate satisfying the following formulas (1), (2) and (3); and
irradiating a laser light to said composite substrate from the side of said sapphire substrate to decompose crystal lattice bonds at an interface between said sapphire substrate and said layer of said nitride of said group 13 element,
wherein the formula (1) is 5.0≤(an average thickness (μm) of said layer of said nitride of said group 13 element/ a diameter (mm) of said sapphire substrate)≤10.0,
wherein the formula (2) is 0.1≤a warpage (mm) of said composite substrate×(50/a diameter (mm) of said composite substrate) 2 ≤0.6,
wherein the formula (3) is 1.10≤a maximum value (μm) of a thickness of said layer of said nitride of said group 13 element / a minimum value (μm) of said thickness of said layer of said nitride of said group 13 element.

2. The method of claim 1 , wherein said maximum value (μm) of said thickness of said layer of said nitride of said group 13 element / said minimum value (μm) of said thickness of said layer of said nitride of said group 13 element is 1.60 or smaller, in said formula (3).

3. The method of claim 1 , wherein said composite substrate satisfies the following formula (4),
wherein the formula (4) is 0.2≤an average thickness (mm) of said layer of said nitride of said group 13 element / a thickness (mm) of said sapphire substrate≤1.0.

4. The method of claim 1 , wherein at least a part of said layer of said nitride of said group 13 element is grown by flux method under an atmosphere including a nitrogen-containing gas from a melt.

5. A composite substrate comprising a sapphire substrate and a layer of a nitride of a group 13 element provided on said sapphire substrate, said layer of said nitride of said group 13 element comprising gallium nitride, aluminum nitride or gallium aluminum nitride, and said composite substrate satisfying the following formulas (1), (2) and (3),
wherein the formula (1) is 5.0≤(an average thickness (μm) of said layer of said nitride of said group 13 element/ a diameter (mm) of said sapphire substrate)≤10.0,
the formula (2) is 0.1≤a warpage (mm) of said composite substrate×(50/a diameter (mm) of said composite substrate) 2 ≤0.6,
the formula (3) is 1.10≤a maximum value (μm) of a thickness of said layer of said nitride of said group 13 element / a minimum value (μm) of said thickness of said layer of said nitride of said group 13 element.

6. The composite substrate of claim 5 , wherein said maximum value (μm) of said thickness of said layer of said nitride of said group 13 element / said minimum value (μm) of said thickness of said layer of said nitride of said group 13 element is 1.60 or smaller, in said formula (3).

7. The composite substrate of claim 5 , wherein said composite substrate satisfies the following formula (4),
wherein the formula (4) is 0.2≤an average thickness (mm) of said layer of said nitride of said group 13 element / a thickness (mm) of said sapphire substrate≤1.0.

8. The composite substrate of claim 5 , wherein said layer of said nitride of said group 13 element emits a fluorescence having a peak in a wavelength of 440 to 470 nm, provided that a light of a wavelength of 330 to 385 nm is irradiated to said layer.

9. The composite substrate of claim 5 , wherein said layer of said nitride of said group 13 element emits a fluorescence having a peak in a wavelength of 540 to 580 nm, provided that a light of a wavelength of 330 to 385 nm is irradiated to said layer.

Assignees

• Ngk Insulators Ltd

Inventors

• Imai Katsuhiro
• Iwai Makoto
• Shimodaira Takanao

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title

• C30B33/04

  using electric or magnetic fields or particle radiation · CPC title

• C30B9/00

  Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) · CPC title

• C30B9/10

  Metal solvents · CPC title