Preparation method of aluminum nitride composite structure based on two-dimensional (2d) crystal transition layer
US-2024141549-A1 · May 2, 2024 · US
Oxydation
Oxydation · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B33/005 |
| Official title | {Oxydation} |
| Display label | Oxydation |
| Total patents | 75 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 2 |
| 2016 | 8 |
| 2017 | 9 |
| 2018 | 4 |
| 2019 | 6 |
| 2020 | 8 |
| 2021 | 7 |
| 2022 | 5 |
| 2023 | 7 |
| 2024 | 8 |
| 2025 | 7 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Support member for supporting a wafer during a heat treatment
US-2024103442-A1 · Mar 28, 2024 · US
Gate all around I/O engineering
US-11923441-B2 · Mar 5, 2024 · US
Methods of manufacturing semiconductor devices semiconductor devices
US-2024071775-A1 · Feb 29, 2024 · US
Method of forming a thin film
US-2023422633-A1 · Dec 28, 2023 · US
Method of producing metal oxides with increased electrical conductivity
US-11739438-B2 · Aug 29, 2023 · US
Magnesium single crystal for biomedical applications and methods of making same
US-11730857-B2 · Aug 22, 2023 · US
Method for manufacturing silicon single-crystal substrate and silicon single-crystal substrate
US-2023212782-A1 · Jul 6, 2023 · US
Nano-wire growth
US-11618970-B2 · Apr 4, 2023 · US
Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate
US-2023002931-A1 · Jan 5, 2023 · US
Method for manufacturing epitaxial substrate, and epitaxial substrate
US-2023005736-A1 · Jan 5, 2023 · US
Gate All Around I/O Engineering
US-2022399457-A1 · Dec 15, 2022 · US
Low work function materials
US-11486056-B2 · Nov 1, 2022 · US
Gate all around I/O engineering
US-11450759-B2 · Sep 20, 2022 · US
Method of forming oxide film, method of manufacturing semiconductor device, and film forming apparatus configured to form oxide film
US-11371161-B2 · Jun 28, 2022 · US
Method of forming oxide film, method of manufacturing semiconductor device, and apparatus configured to form oxide film
US-11373864-B2 · Jun 28, 2022 · US
Method and system for producing silicon carbide ingot
US-2021317593-A1 · Oct 14, 2021 · US
Magnesium single crystal for biomedical applications and methods of making same
US-2021196854-A1 · Jul 1, 2021 · US
Gate All Around I/O Engineering
US-2021104617-A1 · Apr 8, 2021 · US
Semiconductor wafer composed of single-crystal silicon with high gate oxide breakdown, and a process for the manufacture thereof
US-10961640-B2 · Mar 30, 2021 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B33/005?
- CPC C30B33/005 is the Cooperative Patent Classification code for “Oxydation.”
- How many patents are filed under CPC C30B33/005 (Oxydation)?
- Our database includes 75 publications tagged with this CPC code.
- Is patent activity under CPC C30B33/005 growing?
- Publication counts under this code: 8 in 2024 vs 7 in 2025 (latest complete years).