Colored watch glass
US-2026008718-A1 · Jan 8, 2026 · US
by contacting with diffusion materials in the solid state
by contacting with diffusion materials in the solid state · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B31/02 |
| Official title | by contacting with diffusion materials in the solid state |
| Display label | by contacting with diffusion materials in the solid state |
| Total patents | 33 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 1 |
| 2016 | 4 |
| 2017 | 5 |
| 2018 | 7 |
| 2019 | 4 |
| 2020 | 4 |
| 2021 | 3 |
| 2022 | 1 |
| 2023 | 2 |
| 2025 | 1 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Colored watch glass
US-12428335-B2 · Sep 30, 2025 · US
Carbon-doped silicon single crystal wafer and method for manufacturing the same
US-11761118-B2 · Sep 19, 2023 · US
n-Type 4H—SiC single crystal substrate and method of producing n-type 4H—SiC single crystal substrate
US-11655561-B2 · May 23, 2023 · US
Carbon-doped silicon single crystal wafer and method for manufacturing the same
US-2022259767-A1 · Aug 18, 2022 · US
Production of rounded salt particles
US-11078085-B2 · Aug 3, 2021 · US
Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate
US-11021810-B2 · Jun 1, 2021 · US
Thin film substrates including crosslinked carbon nanostructures and related methods
US-10927006-B2 · Feb 23, 2021 · US
Method for the preparation of gallium oxide/copper gallium oxide heterojunction
US-2020312659-A1 · Oct 1, 2020 · US
Colored watch glass
US-2020262740-A1 · Aug 20, 2020 · US
Method for manufacturing a power semiconductor device having a reduced oxygen concentration
US-10727311-B2 · Jul 28, 2020 · US
n-TYPE 4H-SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING n-TYPE 4H-SiC SINGLE CRYSTAL SUBSTRATE
US-2020071849-A1 · Mar 5, 2020 · US
Method of manufacturing an oxide single crystal substrate for a surface acoustic wave device
US-10418543-B2 · Sep 17, 2019 · US
Silicon epitaxial wafer and method of producing silicon epitaxial wafer
US-10355092-B2 · Jul 16, 2019 · US
Production of rounded salt particles
US-2019039911-A1 · Feb 7, 2019 · US
Method for Manufacturing a Power Semiconductor Device Having a Reduced Oxygen Concentration
US-2019035909-A1 · Jan 31, 2019 · US
Production of rounded salt particles
US-10093548-B2 · Oct 9, 2018 · US
Thin film substrates including crosslinked carbon nanostructures and related methods
US-2018194620-A1 · Jul 12, 2018 · US
Method and system for mutliline mir-ir laser
US-2018175579-A1 · Jun 21, 2018 · US
Semiconductor structure and method
US-9945048-B2 · Apr 17, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B31/02?
- CPC C30B31/02 is the Cooperative Patent Classification code for “by contacting with diffusion materials in the solid state.”
- How many patents are filed under CPC C30B31/02 (by contacting with diffusion materials in the solid state)?
- Our database includes 33 publications tagged with this CPC code.
- Is patent activity under CPC C30B31/02 growing?
- Publication counts under this code: 2 in 2023 vs 1 in 2025 (latest complete years).