Joined body of piezoelectric material substrate and support substrate
US-11082025-B2 · Aug 3, 2021 · US
by reactive sputtering
by reactive sputtering · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B25/06 |
| Official title | by reactive sputtering |
| Display label | by reactive sputtering |
| Total patents | 86 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 12 |
| 2016 | 7 |
| 2017 | 13 |
| 2018 | 10 |
| 2019 | 2 |
| 2020 | 9 |
| 2021 | 7 |
| 2022 | 4 |
| 2023 | 8 |
| 2024 | 7 |
| 2025 | 7 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Joined body of piezoelectric material substrate and support substrate
US-11082026-B2 · Aug 3, 2021 · US
Method for manufacturing metal oxynitride film
US-2021125823-A1 · Apr 29, 2021 · US
Method for manufacturing nitride catalyst
US-2021095383-A1 · Apr 1, 2021 · US
Joined body of piezoelectric material substrate and support substrate
US-2021067129-A1 · Mar 4, 2021 · US
Joined body of piezoelectric material substrate and support substrate
US-2021067130-A1 · Mar 4, 2021 · US
Nitride catalyst and method for manufacturing the same
US-10900133-B2 · Jan 26, 2021 · US
Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device
US-10844470-B2 · Nov 24, 2020 · US
Controlled homo-epitaxial growth of hybrid perovskites
US-2020299861-A1 · Sep 24, 2020 · US
Composite nitride-based film structure and method for manufacturing same
US-2020255977-A1 · Aug 13, 2020 · US
Method of forming single-crystal group-iii nitride
US-2020232119-A1 · Jul 23, 2020 · US
Nitride catalyst and method for manufacturing the same
US-2020173043-A1 · Jun 4, 2020 · US
Radical generator and molecular beam epitaxy apparatus
US-10577719-B2 · Mar 3, 2020 · US
Acoustic resonator structure with inclined C-axis piezoelectric bulk and crystalline seed layers
US-10574204-B2 · Feb 25, 2020 · US
Multi-stage deposition system for growth of inclined c-axis piezoelectric material structures
US-10541663-B2 · Jan 21, 2020 · US
Methods for fabricating acoustic structure with inclined c-axis piezoelectric bulk and crystalline seed layers
US-10541662-B2 · Jan 21, 2020 · US
Lift pin, and epitaxial growth apparatus and method of producing silicon epitaxial wafer using the lift pin
US-2019355612-A1 · Nov 21, 2019 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US-10262872-B2 · Apr 16, 2019 · US
Methods for producing piezoelectric bulk and crystalline seed layers of different C-axis orientation distributions
US-10063210-B2 · Aug 28, 2018 · US
Rutile-type niobium oxynitride, method for producing same, and semiconductor structure
US-2018209066-A1 · Jul 26, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B25/06?
- CPC C30B25/06 is the Cooperative Patent Classification code for “by reactive sputtering.”
- How many patents are filed under CPC C30B25/06 (by reactive sputtering)?
- Our database includes 86 publications tagged with this CPC code.
- Is patent activity under CPC C30B25/06 growing?
- Publication counts under this code: 7 in 2024 vs 7 in 2025 (latest complete years).