Composite substrate for surface acoustic wave device, method of producing composite substrate for surface acoustic wave device, and surface acoustic wave device using composite substrate
US-2019288661-A1 · Sep 19, 2019 · US
Joined body of piezoelectric material substrate and support substrate
US11082025B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11082025-B2 |
| Application number | US-202017096199-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 12, 2020 |
| Priority date | May 16, 2018 |
| Publication date | Aug 3, 2021 |
| Grant date | Aug 3, 2021 |
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- Title
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Abstract
Official abstract text for this publication.
A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate to the supporting substrate.
First claim
Opening claim text (preview).
The invention claimed is: 1. A bonded body comprising: a supporting substrate; a piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding said supporting substrate and said piezoelectric material substrate and contacting a main surface of said piezoelectric material substrate, wherein said bonding layer comprises a void extending from said piezoelectric material substrate toward said supporting substrate, and wherein a recess is provided on said main surface of said piezoelectric material substrate and said void is communicated with said recess. 2. The bonded body of claim 1 , wherein said void penetrates said bonding layer in a direction of thickness of said bonding layer. 3. The bonded body of claim 1 , wherein said bonding layer comprises a material selected from the group consisting of silicon oxide and tantalum pentoxide. 4. The bonded body of claim 1 , wherein said bonding layer contacts a main surface of said supporting substrate. 5. The bonded body of claim 1 , further comprising an intermediate layer between said bonding layer and said supporting substrate. 6. The bonded body of claim 1 , wherein said piezoelectric material substrate has a thickness of 20 μm or smaller. 7. A bonded body comprising: a supporting substrate; a piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding said supporting substrate and said piezoelectric material substrate and contacting a main surface of said piezoelectric material substrate, wherein said bonding layer comprises a void extending from said piezoelectric material substrate toward said supporting substrate, and wherein said bonding layer comprises a material selected from the group consisting of silicon oxide and tantalum pentoxide. 8. The bonded body of claim 7 , wherein said bonding layer contacts a main surface of said supporting substrate. 9. The bonded body of claim 7 , further comprising an intermediate layer between said bonding layer and said supporting substrate. 10. The bonded body of claim 7 , wherein said piezoelectric material substrate has a thickness of 20 μm or smaller. 11. A bonded body comprising: a supporting substrate; a piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding said supporting substrate and said piezoelectric material substrate and contacting a main surface of said piezoelectric material substrate, wherein said bonding layer comprises a void extending from said piezoelectric material substrate toward said supporting substrate, and wherein said bonded body further comprises an intermediate layer between said bonding layer and said supporting substrate. 12. The bonded body of claim 11 wherein said piezoelectric material substrate has a thickness of 20 μm or smaller.
Assignees
Inventors
Classifications
Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title
of lithium niobate or lithium-tantalate substrates · CPC title
characterised by the substrate · CPC title
Oxides (C23C14/10 takes precedence) · CPC title
Oxides · CPC title
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Frequently asked questions
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- What does patent US11082025B2 cover?
- A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding lay…
- Who is the assignee on this patent?
- Ngk Insulators Ltd
- What technology area does this patent fall under?
- Primary CPC classification H03H9/02574. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 03 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).