Multi-stage deposition system for growth of inclined c-axis piezoelectric material structures

Patent metadata

Field	Value
Publication number	US-10541663-B2
Application number	US-201615293091-A
Country	US
Kind code	B2
Filing date	Oct 13, 2016
Priority date	Oct 14, 2015
Publication date	Jan 21, 2020
Grant date	Jan 21, 2020

Abstract

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

First claim

What is claimed is:

1. A deposition system comprising:
a first linear sputtering apparatus comprising a first target surface configured to eject metal atoms;
a second linear sputtering apparatus comprising a second target surface configured to eject metal atoms;
a substrate table comprising a support surface that is configured to receive at least one wafer and that is coupled to a translation element, wherein the translation element is configured to translate the substrate table and the at least one wafer in a first translation direction between a first position proximate to the first linear sputtering apparatus and a second position proximate to the second linear sputtering apparatus; and
a collimator associated with the second linear sputtering apparatus, the collimator comprising a plurality of guide members defining a plurality of collimator apertures arranged between the second linear sputtering apparatus and the substrate table when the support surface is proximate to the second linear sputtering apparatus, the collimator being linearly translatable in a second translation direction substantially perpendicular to the first translation direction and parallel to the second target surface;
wherein at least one of the first target surface or the second target surface is arranged non-parallel to the support surface.

2. The deposition system of claim 1 , further comprising an additional collimator comprising a first plurality of guide members defining a first plurality of collimator apertures arranged between the first linear sputtering apparatus and the substrate table when the support surface is proximate to the first linear sputtering apparatus.

3. The deposition system of claim 1 , further comprising a load lock chamber, wherein the translation element is configured to translate the substrate table and the at least one wafer from the load lock chamber to at least one of the first position or the second position.

4. The deposition system of claim 1 , further comprising:
an enclosure containing the first linear sputtering apparatus, the second linear sputtering apparatus, the collimator associated with the second linear sputtering apparatus, and the substrate table; and
at least one vacuum pumping element configured to generate at least one subatmospheric pressure condition within the enclosure.

5. The deposition system of claim 1 , further comprising a first vacuum pumping element configured to generate a first subatmospheric pressure condition in a first chamber containing the first linear sputtering apparatus, and comprising a second vacuum pumping element configured to generate a second subatmospheric pressure condition in a second chamber containing the second linear sputtering apparatus.

6. The deposition system of claim 1 , wherein the second plurality of guide members is arranged non-perpendicular to the support surface.

7. The deposition system of claim 1 , wherein the substrate table is electrically biased to a potential other than ground.

8. The deposition system of claim 2 , wherein the additional collimator is electrically biased to a potential other than ground.

9. The deposition system of claim 1 , wherein the first linear sputtering apparatus comprises a first linear magnetron that includes a first sputtering cathode operatively coupled to the first target surface to promote ejection of metal atoms from the first target surface, and wherein the second linear sputtering apparatus comprises a second linear magnetron that includes a second sputtering cathode operatively coupled to the second target surface to promote ejection of metal atoms from the second target surface.

10. The deposition system of claim 1 , wherein the second plurality of guide members comprises a second plurality of longitudinal members and a second plurality of transverse members that form a second grid.

11. The deposition system of claim 1 , wherein the collimator associated with the second linear sputtering apparatus is configured to translate linearly during operation of the second linear sputtering apparatus.

12. The deposition system of claim 1 , wherein the second target surface is oriented 15 to 55 degrees apart from the support surface.

13. The deposition system of claim 1 , wherein the support surface is configured to receive at least two wafers each having a diameter of at least 50 mm.

14. The deposition system of claim 1 , wherein each of the first target surface and the second target surface comprises aluminum or zinc and is configured to eject aluminum atoms or zinc atoms.

15. The deposition system of claim 1 , being configured to receive a supply of sputtering gas, wherein the sputtering gas comprises a gas species adapted to react with the metal atoms.

16. The deposition system of claim 1 , including at least one wafer received by the support surface, wherein an acoustic reflector structure is arranged over the at least one wafer, and at least one electrode structure is arranged over at least a portion of the acoustic reflector structure.

17. The deposition system of claim 1 , including at least one wafer received by the support surface, wherein the at least one wafer comprises a substrate defining a recess, a support layer is arranged over the recess, and an electrode structure is arranged over the support layer.

18. The deposition system of claim 2 , further comprising:
a first deposition aperture arranged between the additional collimator and the substrate table;
a first uniformity shield configured to permit adjustment of dimensions of the first deposition aperture;
a second deposition aperture arranged between the collimator associated with the second linear sputtering apparatus and the substrate table; and
a second uniformity shield configured to permit adjustment of dimensions of the second deposition aperture.

19. The deposition system of claim 2 , wherein:
the first linear sputtering apparatus, optionally in conjunction with the additional collimator, is configured for growth of a crystalline seed layer over the at least one wafer, the crystalline seed layer comprising a c-axis having an orientation distribution predominantly in a range of from 0 degrees to 35 degrees relative to normal of a face of the at least one wafer; and
the second linear sputtering apparatus and the collimator associated with the second linear sputtering apparatus are configured for growth of a hexagonal crystal structure piezoelectric material bulk layer over the crystalline seed layer, the hexagonal crystal structure piezoelectric material bulk layer comprising a c-axis having an orientation distribution predominantly in a range of from 30 degrees to 50 degrees relative to normal of a face of the at least one wafer.

20. The deposition system of claim 19 , wherein:
the support surface is configured to receive the at least one wafer, said at least one wafer having a diameter of at least 50 mm;
the first linear sputtering apparatus, optionally in conjunction with the first collimator, is configured for growth of the crystalline seed layer covering at least about 50% of a face of the at least one wafer; and
the second linear sputtering apparatus and the collimator associated with the second linear sputtering apparatus are configured for growth of the hexagonal crystal structure piezoelectric material bulk layer covering at least about 50% of a face of the at least one wafer.

21. A deposition system comprising:
a linear sputtering apparatus comprising a target surface, the linear sputtering apparatus being

Assignees

• Qorvo Us Inc

Inventors

• Mccarron Kevin
• Belsick John

Classifications

• C30B25/06

  by reactive sputtering · CPC title

• H01J37/3408

  Planar magnetron sputtering · CPC title

• C23C14/3442

  using an ion beam · CPC title

• H03H9/02015

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title