Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

Patent metadata

Field	Value
Publication number	US-10844470-B2
Application number	US-201715645412-A
Country	US
Kind code	B2
Filing date	Jul 10, 2017
Priority date	Dec 27, 2010
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an α-Al2O3 substrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the α-Al2O3 substrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the α-Al2O3 substrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.

First claim

The invention claimed is:

1. An epitaxial film forming method that uses a sputtering apparatus having a target electrode having a target arranged thereon and a substrate holder provided with a heater electrode and a bias electrode, and that epitaxially grows a +c polarity group III nitride semiconductor thin film by sputtering on a sapphire substrate arranged on the substrate holder, the epitaxial film forming method comprising:
arranging the sapphire substrate on the substrate holder; and
forming an epitaxial film of the +c polarity group III nitride semiconductor thin film directly on the sapphire substrate arranged on the substrate holder, by the sputtering by applying high-frequency power to the target electrode and by applying high-frequency bias power to the bias electrode,
wherein, during the forming an epitaxial film of the +c polarity group III nitride semiconductor thin film directly on the sapphire substrate,
the sapphire substrate at a predetermined temperature is maintained by the heater electrode,
the high-frequency power and the high-frequency bias power are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur, and
(A) the applying the high-frequency power to the target electrode generates plasma on a front surface of the target such that the plasma causes the target to give off a group III nitride molecule, while (B) the applying high-frequency bias power to the bias electrode generates an electric field in a direction toward the surface of the sapphire substrate in a region between the sapphire substrate and the plasma, such that the electric field orients a polarization, from a negative charge to a positive charge, of the group III nitride molecule toward the sapphire substrate supported by the substrate holder.

2. The epitaxial film forming method according to claim 1 , wherein for frequencies of the high-frequency power and the high-frequency bias power, different frequencies are selected.

3. The epitaxial film forming method according to claim 1 , wherein the high-frequency power and the high-frequency bias power, for which the same frequency is selected, are applied so that a phase difference becomes 180°.

4. The epitaxial film forming method according to claim 1 , wherein the bias electrode has a first electrode to which a positive DC voltage is applied and a second electrode to which a negative DC voltage is applied,
in a state in which the positive DC voltage is applied to the first electrode and the negative DC voltage is applied to the second electrode, the sapphire substrate is electrostatically adsorbed by the substrate holder, and
an epitaxial film of the +c polarity group III nitride semiconductor thin film is formed on the sapphire substrate.

5. The epitaxial film forming method according to claim 1 , wherein the high-frequency bias power is applied after the high-frequency power is applied and before a film formation surface of the sapphire substrate is covered by a crystal layer made of a group III nitride semiconductor.

6. A manufacturing method of a semiconductor light-emitting element comprising:
forming a buffer layer of a semiconductor light-emitting element by the epitaxial film forming method according to claim 1 .

Assignees

• Canon Anelva Corp

Inventors

• Daigo Yoshiaki
• Ishibashi Keiji

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P14/22 Primary

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title