Method for producing nitride crystal
US-2015354086-A1 · Dec 10, 2015 · US
Rutile-type niobium oxynitride, method for producing same, and semiconductor structure
US2018209066A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018209066-A1 |
| Application number | US-201615745957-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 21, 2016 |
| Priority date | Jul 23, 2015 |
| Publication date | Jul 26, 2018 |
| Grant date | — |
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Abstract
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The present disclosure provides a rutile-type niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure ( 100 ) including: a substrate ( 110 ) having at least one principal surface composed of a rutile-type compound having a rutile-type crystal structure; and a niobium oxynitride (for example, a rutile-type niobium oxynitride film ( 120 )) grown on the one principal surface of the substrate ( 110 ), the niobium oxynitride having a rutile-type crystal structure and being represented by the chemical formula NbON.
First claim
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1 . A rutile-type niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON. 2 . The rutile-type niobium oxynitride according to claim 1 , being a semiconductor. 3 . The rutile-type niobium oxynitride according to claim 2 , being an optical semiconductor. 4 . The rutile-type niobium oxynitride according to claim 1 , being oriented in a (110) plane. 5 . A semiconductor structure comprising: a substrate having at least one principal surface composed of a rutile-type compound having a rutile-type crystal structure; and a rutile-type niobium oxynitride grown on the one principal surface of the substrate, wherein the rutile-type niobium oxynitride is as defined in claim 1 . 6 . The semiconductor structure according to claim 5 , wherein the substrate is a titanium oxide substrate. 7 . The semiconductor structure according to claim 5 , wherein the rutile-type niobium oxynitride is oriented in a (110) plane. 8 . The semiconductor structure according to claim 5 , wherein the rutile-type compound of the substrate is oriented in a (110) plane. 9 . A rutile-type niobium oxynitride production method for producing the rutile-type niobium oxynitride according to claim 1 , the method comprising: preparing a substrate having at least one principal surface composed of a rutile-type compound having a rutile-type crystal structure; and growing a niobium oxynitride on the one principal surface of the substrate by epitaxial growth. 10 . The rutile-type niobium oxynitride production method according to claim 9 , wherein the epitaxial growth is carried out by pulsed laser deposition. 11 . The rutile-type niobium oxynitride production method according to claim 10 , wherein a target composed of niobium oxide is used, and the rutile-type niobium oxynitride is grown by a reaction of the target having been laser-ablated with oxygen and nitrogen radical.
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Classifications
Crystal orientation · CPC title
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
characterised by the chemical composition · CPC title
Crystal orientations · CPC title
being non-crystalline insulating materials, e.g. glass or polymers · CPC title
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- What does patent US2018209066A1 cover?
- The present disclosure provides a rutile-type niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure ( 100 ) including: a substrate ( 110 ) having at least one principal surface composed of a rutile-type compound having a rutile-type crystal structure; and a niobium oxynitride (for ex…
- Who is the assignee on this patent?
- Panasonic Corp
- What technology area does this patent fall under?
- Primary CPC classification C30B29/38. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Jul 26 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).