C-PLANE GaN SUBSTRATE
US-2017352721-A1 · Dec 7, 2017 · US
Pattern deposit, e.g. by using masks
Pattern deposit, e.g. by using masks · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B25/04 |
| Official title | Pattern deposit, e.g. by using masks |
| Display label | Pattern deposit, e.g. by using masks |
| Total patents | 394 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 28 |
| 2016 | 23 |
| 2017 | 50 |
| 2018 | 31 |
| 2019 | 35 |
| 2020 | 23 |
| 2021 | 35 |
| 2022 | 37 |
| 2023 | 45 |
| 2024 | 39 |
| 2025 | 40 |
| 2026 | 8 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for manufacturing diamond substrate, diamond substrate, and freestanding diamond substrate
US-2017247811-A1 · Aug 31, 2017 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US-2017213727-A1 · Jul 27, 2017 · US
Heterostructure Including Anodic Aluminum Oxide Layer
US-2017186905-A1 · Jun 29, 2017 · US
Selective nanoscale growth of lattice mismatched materials
US-9685324-B2 · Jun 20, 2017 · US
Process of selective epitaxial growth for void free gap fill
US-2017125244-A1 · May 4, 2017 · US
Growth methods for controlled large-area fabrication of high-quality graphene analogs
US-9580834-B2 · Feb 28, 2017 · US
Method for Producing a Semiconductor Layer Sequence
US-2017047479-A1 · Feb 16, 2017 · US
Substrate processing apparatus, apparatus for manufacturing semiconductor device, and gas supply system
US-9540728-B2 · Jan 10, 2017 · US
Substrate, method of preparing the same, and light-emitting diode using the substrate
US-2016380153-A1 · Dec 29, 2016 · US
Mask for thin film deposition and method of manufacturing oled using the same
US-2016372669-A1 · Dec 22, 2016 · US
Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same
US-9525026-B2 · Dec 20, 2016 · US
Methods using mask structures for substantially defect-free epitaxial growth
US-9476143-B2 · Oct 25, 2016 · US
Substrate processing apparatus, apparatus for manufacturing semiconductor device, and gas supply system
US-2016305023-A1 · Oct 20, 2016 · US
Cubic phase, nitrogen-based compound semiconductor films
US-9461112-B1 · Oct 4, 2016 · US
Epitaxial Growth of Crystalline Material
US-2016265139-A1 · Sep 15, 2016 · US
Mask for thin film deposition and method of manufacturing OLED using the same
US-9441288-B2 · Sep 13, 2016 · US
Depression filling method and processing apparatus
US-2016240379-A1 · Aug 18, 2016 · US
Depression Filling Method and Processing Apparatus
US-2016240618-A1 · Aug 18, 2016 · US
Method of manufacturing semiconductor device, substrate processing apparatus, gas supply system, and recording medium
US-9412587-B2 · Aug 9, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B25/04?
- CPC C30B25/04 is the Cooperative Patent Classification code for “Pattern deposit, e.g. by using masks.”
- How many patents are filed under CPC C30B25/04 (Pattern deposit, e.g. by using masks)?
- Our database includes 394 publications tagged with this CPC code.
- Is patent activity under CPC C30B25/04 growing?
- Publication counts under this code: 39 in 2024 vs 40 in 2025 (latest complete years).