Substrate, method of preparing the same, and light-emitting diode using the substrate

Patent metadata

Field	Value
Publication number	US-2016380153-A1
Application number	US-201615191862-A
Country	US
Kind code	A1
Filing date	Jun 24, 2016
Priority date	Jun 25, 2015
Publication date	Dec 29, 2016
Grant date	—

Abstract

The present invention relates to a gallium nitride substrate, a method of preparing the gallium nitride substrate, and a double-sided light-emitting diode using the gallium nitride substrate. The gallium nitride substrate has a first face having a Ga-polar face and a second face having an N-polar face. Protrusions with semi-polar surfaces are formed on the second face. A light-emitting body may be formed on the first face, and a separate light-emitting body may be formed through the surfaces of the protrusions.

First claim

What is claimed is:

1 . A gallium nitride substrate comprising:
a first face that comprises a Ga-polar face having gallium atoms arranged on a surface thereof; a second face that faces the first face and comprises an N-polar face having nitrogen atoms arranged on a surface thereof; and protrusions that are formed on the second face and have a protruding surface, which is a semi-polar surface.

2 . The gallium nitride substrate of claim 1 , wherein the gallium atoms and the nitrogen atoms appear on a surface through the semi-polar surface.

3 . The gallium nitride substrate of claim 1 , wherein an interval distance between the protrusions adjacent to each other is constant.

4 . The gallium nitride substrate of claim 1 , wherein the protrusions function as nuclei for growth to form the first face and the second face.

5 . A method of preparing a gallium nitride substrate, the method comprising:
forming mask patterns and gallium nitride rods that reclaim gaps between the mask patterns on a substrate for growth; covering the mask patterns by having the gallium nitride rods as nuclei for growth to form a gallium nitride layer; removing the covered mask patterns; and etching the gallium nitride rods by providing an etchant to etched holes formed by the removing of the mask patterns to form protrusions having some of the gallium nitride rods remained on the gallium nitride layer.

6 . The method of claim 5 , wherein the forming of the mask patterns and gallium nitride rods on a substrate for growth comprises:
forming the mask patterns on the substrate for growth; and growing the gallium nitride rods that reclaim the gaps between the mask patterns.

7 . The method of claim 5 , wherein side surfaces of the gallium nitride rods have semi-polar faces.

8 . The method of claim 5 , wherein the protrusions have semi-polar faces.

9 . The method of claim 5 , wherein the first face at an upper part of the gallium nitride is a Ga-polar face, and the second face that faces the first face and contacts the mast patterns is a N-polar face.

10 . The method of claim 5 , wherein the etchant is a KOH solution, and a concentration of the KOH solution ranges from about 1 M to about 5 M, and a temperature of the etchant ranges from about 60° C. to about 120° C.

11 . A double-sided light-emitting diode comprising:
a gallium nitride substrate formed of a gallium nitride material; a first light-emitting body that has been grown in a first direction from the gallium nitride substrate; and a second light-emitting body that has been grown in a second direction, which is opposite to the first direction, from the gallium nitride substrate.

12 . The double-sided light-emitting diode of claim 11 , wherein the gallium nitride substrate comprises:
a first face that is configured to have a Ga-polar face having gallium atoms arranged on a surface thereof; a second face that is configured to have an N-polar face having nitrogen atoms arranged on a surface thereof; and protrusions that are formed on the second face and have a protruding surface, which is a semi-polar surface.

13 . The double-sided light-emitting diode of claim 12 , wherein the first light-emitting body is formed on the first face which forms light of a first color, and the second light-emitting body is formed on the second face which forms light of a second color.

Assignees

• Gwangju Inst Science & Tech

Inventors

• Lee Dong-Seon
• Kong Duk-Jo

Classifications

• H01L33/24

  Electricity · mapped topic

• H01L33/32 Primary

  Electricity · mapped topic

• H01L33/0075

  Electricity · mapped topic

• H01L33/08

  Electricity · mapped topic

• H10H29/14

  comprising multiple light-emitting semiconductor components · CPC title