Substrate processing apparatus, apparatus for manufacturing semiconductor device, and gas supply system

Patent metadata

Field	Value
Publication number	US-9540728-B2
Application number	US-201615190578-A
Country	US
Kind code	B2
Filing date	Jun 23, 2016
Priority date	Nov 19, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

First claim

What is claimed is:

1. A substrate processing apparatus, comprising:
a process chamber configured to accommodate a substrate therein;
a first process gas supply system configured to supply a first process gas containing silicon and a halogen element to the substrate existing within the process chamber;
a second process gas supply system configured to supply a second process gas containing silicon and not containing a halogen element to the substrate existing within the process chamber;
a third process gas supply system configured to supply a third process gas containing silicon to the substrate existing within the process chamber;
a heater configured to heat the substrate existing within the process chamber; and
a control part configured to control the first process gas supply system, the second process gas supply system, the third process gas supply system and the heater so as to perform processes of alternately performing supplying the first process gas to the substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying the second process gas to the substrate, and supplying the third process gas to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

2. The apparatus of claim 1 , wherein the control part is configured to control the first process gas supply system, the second process gas supply system, the third process gas supply system and the heater so that:
the first silicon film is homo-epitaxially grown on the monocrystalline silicon and a seed layer is formed on the insulation film during the processes of alternately performing supplying the first process gas and supplying the second process gas; and
the first silicon film is further homo-epitaxially grown and the second silicon film is grown on the seed layer during the process of supplying the third process gas.

3. The apparatus of claim 1 , wherein a recess is formed on the surface of the substrate, the recess including a bottom portion formed of the monocrystalline silicon and a side portion formed of the insulation film.

4. The apparatus of claim 3 , wherein the control part is configured to control the first process gas supply system, the second process gas supply system, the third process gas supply system and the heater so that a top portion of the first silicon film is covered with the second silicon film grown from the side portion of the recess, so as to stop homo-epitaxial growth of the first silicon film.

5. The apparatus of claim 3 , wherein the control part is configured to control the first process gas supply system, the second process gas supply system, the third process gas supply system and the heater so that a top portion of the first silicon film is covered with the second silicon film grown from the side portion of the recess, so as to form a laminated structure including the first silicon film and the second silicon film laminated on the first silicon film.

6. The apparatus of claim 1 , wherein a crystal structure of the second silicon film is an amorphous, a polycrystal or a mixture of the amorphous and the polycrystal.

7. The apparatus of claim 1 , wherein the first process gas supply system is configured to supply silane chloride as the first process gas, the second process gas supply system is configured to supply hydrogenated silane as the second process gas, and the third process gas supply system is configured to supply hydrogenated silane as the third process gas.

8. The apparatus of claim 1 , further comprising:
a fourth process gas supply system configured to supply a dopant gas to the substrate existing within the process chamber,
wherein the control part is configured to control the third process gas supply system and the fourth process gas supply system so that the dopant gas is supplied together with the third process gas to the substrate during the process of supplying the third process gas.

9. The apparatus of claim 1 , wherein the second process gas differs in molecular structure from the third process gas.

10. The apparatus of claim 1 , wherein a pyrolysis temperature of the second process gas is lower than a pyrolysis temperature of the third process gas.

11. The apparatus of claim 1 , wherein the second process gas is identical in molecular structure with the third process gas.

12. The apparatus of claim 1 , wherein the control part is configured to control the heater so as to perform a process of thermally treating the first silicon film and the second silicon film after the first silicon film and the second silicon film are grown.

13. The apparatus of claim 12 , wherein the control part is configured to control the heater such that a portion of the second silicon film which makes contact with the first silicon film is changed into a homo-epitaxial state when the process of thermally treating the first silicon film and the second silicon film is performed.

14. The apparatus of claim 12 , wherein the control part is configured to control the heater such that a portion of the second silicon film which makes contact with the first silicon film is changed into a homo-epitaxial silicon film when the process of thermally treating the first silicon film and the second silicon film is performed.

15. The apparatus of claim 12 , wherein the control part is configured to control the heater such that a region occupied by the first silicon film is expanded when the process of thermally treating the first silicon film and the second silicon film is performed.

16. The apparatus of claim 1 , wherein the control part is configured to control the heater such that:
a temperature of the substrate is set at a first temperature during the processes of alternately performing supplying the first process gas and supplying the second process gas; and
a temperature of the substrate is set at a second temperature equal to or higher than the first temperature during the process of supplying the third process gas.

17. The apparatus of claim 16 , wherein the control part is configured to control the heater so as to perform a process of thermally treating the first silicon film and the second silicon film after the first silicon film and the second silicon film are grown, and
a temperature of the substrate is set at a third temperature equal to or higher than the second temperature when the process of thermally treating the first silicon film and the second silicon film is performed.

18. An apparatus for manufacturing a semiconductor device, comprising:
a process chamber configured to accommodate a substrate therein;
a first process gas supply system configured to supply a first process gas containing silicon and a halogen element to the substrate existing within the process chamber;
a second process gas supply system configured to supply a second process gas containing silicon and not containing a halogen element to the substrate existing within the process chamber;
a third process gas supply system configured to supply a third process gas containing silicon to the substrate existing within the process chamber;
a heater configured to heat the substrate existing within the process chamber; and
a control part configured to control the first process gas supply system, the second process gas supply system, the third process gas supply system and the heater so as to perform processes of alternately performing supplying the first process gas to the substrate having a s

Assignees

• Hitachi Int Electric Inc

Inventors

• Moriya Atsushi
• Nakaiso Naoharu
• Orihashi Yugo
• Murakami Kotaro

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P14/3822

  Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing · CPC title

• H10P14/3458

  Monocrystalline · CPC title