Depression Filling Method and Processing Apparatus

Patent metadata

Field	Value
Publication number	US-2016240618-A1
Application number	US-201615041144-A
Country	US
Kind code	A1
Filing date	Feb 11, 2016
Priority date	Feb 18, 2015
Publication date	Aug 18, 2016
Grant date	—

Abstract

A method of filling a depression of a workpiece is provided. The depression passes through an insulating film and extends up to an inside of a semiconductor substrate. The method includes forming a first thin film made of a semiconductor material along a wall surface which defines the depression, performing gas phase doping on the first thin film, by annealing the workpiece within a vessel, forming an epitaxial region from the semiconductor material of the first thin film along a surface of the semiconductor substrate which defines the depression, without moving the first thin film with the gas phase doping performed, forming a second thin film made of a semiconductor material along the wall surface which defines the depression; and by annealing the workpiece within the vessel, further forming an epitaxial region from the semiconductor material of the second thin film moved toward a bottom of the depression.

First claim

What is claimed is:

1 . A method of filling a depression of a workpiece which includes a semiconductor substrate and an insulating film formed on the semiconductor substrate, the depression passing through the insulating film and extending up to an inside of the semiconductor substrate, the method comprising:
forming a first thin film made of a semiconductor material along a wall surface which defines the depression; performing gas phase doping on the first thin film; by annealing the workpiece within a vessel, forming an epitaxial region conforming to crystals of the semiconductor substrate from the semiconductor material of the first thin film along a surface of the semiconductor substrate which defines the depression, without moving the first thin film with the gas phase doping performed; forming a second thin film made of a semiconductor material along the wall surface which defines the depression; and by annealing the workpiece within the vessel, further forming an epitaxial region from the semiconductor material of the second thin film moved toward a bottom of the depression.

2 . The method of claim 1 , wherein the forming the epitaxial region includes annealing the workpiece within the vessel set at a first pressure, and the further forming the epitaxial region includes annealing the workpiece within the vessel set at a second pressure, and
wherein a range of the first pressure includes a range of the second pressure.

3 . The method of claim 2 , wherein the first pressure is a pressure equal to or higher than 1.3×10 −8 Pa and equal to or lower than 1.0×10 5 Pa, and the second pressure is a pressure equal to or higher than 1.3×10 −8 Pa and equal to or lower than 1.3×10 2 Pa.

4 . The method of claim 1 , further comprising:
etching the first thin film between the forming the epitaxial region and the forming the second thin film.

5 . The method of claim 1 , further comprising:
etching the second thin film after the further forming the epitaxial region.

6 . A processing apparatus comprising:
a vessel; a gas supply part configured to supply a first gas for forming a first thin film made of a semiconductor material, a second gas for forming a second thin film made of a semiconductor material and a third gas for use in gas phase doping, into the vessel; a heating device configured to heat an internal space of the vessel; and a control part configured to control the gas supply part and the heating device, wherein the control part is configured to execute a first control which causes the gas supply part to supply the first gas into the vessel, a second control which causes the gas supply part to supply the third gas into the vessel after the first control is executed, a third control which causes the heating device to heat the internal space of the vessel after the second control is executed, a fourth control which causes the gas supply part to supply the second gas into the vessel after the third control is executed, and a fifth control which causes the heating device to heat the internal space of the vessel after the fourth control is executed.

7 . The apparatus of claim 6 , further comprising:
an exhaust device configured to depressurize the internal space of the vessel, wherein the control part is configured to: further control the exhaust device; in the third control, cause the exhaust device to set an internal pressure of the vessel at a first pressure and cause the heating device to heat the internal space of the vessel; and in the fifth control, cause the exhaust device to set the internal pressure of the vessel at a second pressure and cause the heating device to heat the internal space of the vessel, and wherein a range of the first pressure includes a range of the second pressure.

8 . The apparatus of claim 7 , wherein the first pressure is a pressure equal to or higher than 1.3×10 −8 Pa and equal to or lower than 1.0×10 5 Pa, and the second pressure is a pressure equal to or higher than 1.3×10 −8 Pa and equal to or lower than 1.3×10 2 Pa.

9 . The apparatus of claim 6 , wherein the gas supply part is configured to additionally supply a fourth gas for etching the first thin film into the vessel, and the control part is configured to additionally execute, between execution of the third control and execution of the fourth control, a sixth control which causes the gas supply part to supply the fourth gas into the vessel.

10 . The apparatus of claim 6 , wherein the gas supply part is configured to additionally supply a fifth gas for etching the second thin film into the vessel, and the control part is configured to additionally execute, after execution of the fifth control, a seventh control which causes the gas supply part to supply the fifth gas into the vessel.

Assignees

• Tokyo Electron Ltd

Inventors

• Chiba Youichirou
• Yamada Takumi
• Suzuki Daisuke

Classifications

• H10P95/906

  for altering the shape of semiconductors, e.g. smoothing the surface · CPC title

• H10P50/266

  by vapour etching only · CPC title

• H10P32/302

  Doping polycrystalline silicon or amorphous silicon layers · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P32/12

  between a solid phase and a gaseous phase · CPC title