Wafer carrier with a multi-pocket configuration
US-D806046-S · Dec 26, 2017 · US
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B25/00 |
| Official title | Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth |
| Display label | Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth |
| Total patents | 241 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 23 |
| 2016 | 21 |
| 2017 | 32 |
| 2018 | 22 |
| 2019 | 26 |
| 2020 | 28 |
| 2021 | 24 |
| 2022 | 16 |
| 2023 | 18 |
| 2024 | 12 |
| 2025 | 17 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of producing apatite crystal, and apatite crystal
US-2017362737-A1 · Dec 21, 2017 · US
Vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates
US-2017350038-A1 · Dec 7, 2017 · US
Single crystal diamond
US-9816202-B2 · Nov 14, 2017 · US
Multilayer iron nitride hard magnetic materials
US-2017243680-A1 · Aug 24, 2017 · US
Array of metallic nanotubes
US-9732417-B2 · Aug 15, 2017 · US
Method and system for the localized deposit of metal on a surface
US-2017226636-A1 · Aug 10, 2017 · US
Single-crystal diamond and manufacturing method thereof
US-9725826-B2 · Aug 8, 2017 · US
Ultra long lifetime gallium arsenide
US-9704706-B2 · Jul 11, 2017 · US
Method for making epitaxial structure
US-2017167050-A1 · Jun 15, 2017 · US
SiC epitaxial wafer and method for manufacturing the same
US-9679767-B2 · Jun 13, 2017 · US
Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
US-9673046-B2 · Jun 6, 2017 · US
Solid state lighting devices without converter materials and associated methods of manufacturing
US-9601658-B2 · Mar 21, 2017 · US
Growth methods for controlled large-area fabrication of high-quality graphene analogs
US-9580834-B2 · Feb 28, 2017 · US
Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer
US-2017040166-A1 · Feb 9, 2017 · US
Wafer carrier with a multi-pocket configuration
US-D778247-S · Feb 7, 2017 · US
PRODUCTION METHOD OF SiC CRYSTAL
US-2016369424-A1 · Dec 22, 2016 · US
Single crystal diamond
US-9518338-B2 · Dec 13, 2016 · US
Monolayer films of semiconducting metal dichalcogenides, methods of making same, and uses of same
US-2016308006-A1 · Oct 20, 2016 · US
Method of purifying nanodiamond powder and purified nanodiamond powder
US-9446956-B2 · Sep 20, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B25/00?
- CPC C30B25/00 is the Cooperative Patent Classification code for “Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth.”
- How many patents are filed under CPC C30B25/00 (Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth)?
- Our database includes 241 publications tagged with this CPC code.
- Is patent activity under CPC C30B25/00 growing?
- Publication counts under this code: 12 in 2024 vs 17 in 2025 (latest complete years).