Single crystal diamond

Patent metadata

Field	Value
Publication number	US-9816202-B2
Application number	US-201615298380-A
Country	US
Kind code	B2
Filing date	Oct 20, 2016
Priority date	Sep 20, 2002
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.

First claim

What is claimed is:

1. A (001) single crystal CVD diamond plate having major surfaces on opposite sides thereof bounded by {100} side surfaces, each major surface having at least one linear dimension exceeding 10 mm.

2. A diamond plate according to claim 1 , wherein at least one linear dimension exceeds 12 mm.

3. A diamond plate according to claim 2 , wherein at least one linear dimension exceeds 15 mm.

4. A diamond plate according to claim 1 , having first and second linear dimensions exceeding 10 mm.

5. A diamond plate according to claim 4 , wherein the first and/or the second linear dimension exceeds 12 mm.

6. A diamond plate according to claim 5 , wherein the first and/or the second linear dimension exceeds 15 mm.

7. A diamond plate according to claim 1 , which is a rectangular (001) single crystal diamond plate bounded by {100} side surfaces, wherein the at least one linear dimension is an axis, lateral dimension or lateral edge dimension.

8. A diamond plate according to claim 1 , wherein the at least one linear dimension is a <100> edge formed by the intersection of a {100} side surface with a major surface.

9. A diamond plate according to claim 4 , wherein the first and second linear dimensions are orthogonal <100> edges formed by the intersection of respective {100} side surfaces with a major surface.

10. A diamond plate according to claim 1 , which has a rectangular, square, parallelogram or like shape.

11. A single crystal CVD diamond plate having major surfaces on opposite sides thereof, and having dislocations intersecting the major surfaces, wherein the density of the dislocations intersecting the major surfaces does not exceed 50/mm 2 .

12. A diamond plate according to claim 11 , wherein the density of the dislocations intersecting the major surfaces does not exceed 20/mm 2 .

13. A diamond plate according to claim 12 , wherein the density of the dislocations intersecting the major surfaces does not exceed 10/mm 2 .

14. A diamond plate according to claim 13 , wherein the density of the dislocations intersecting the major surfaces does not exceed 5/mm 2 .

15. A diamond plate according to claim 11 , wherein the density of dislocations intersecting any other plane in the diamond plate does not exceed the respective density limit of the dislocations intersecting the major surfaces.

16. A diamond plate according to claim 11 , wherein at least one linear dimension exceeds 10 mm.

17. A single crystal CVD diamond plate, having major surfaces on opposite sides thereof, and having dislocations produced during growth, wherein the dislocations are oriented in a direction generally parallel to at least one of the major surfaces.

18. A diamond plate according to claim 17 , wherein the direction of the dislocations is at an angle of less than 30° relative to at least one of the major surfaces.

19. A diamond plate according to claim 18 , wherein the direction of the dislocations is at an angle of less than 20° relative to at least one of the major surfaces.

20. A diamond plate according to claim 19 , wherein the direction of the dislocations is at an angle of less than 10° relative to at least one of the major surfaces.

21. A diamond plate according to claim 20 , wherein the direction of the dislocations is at an angle of less than 5° relative to at least one of the major surfaces.

22. A diamond plate according to claim 17 , wherein each major surface has a first linear dimension, corresponding in direction to the general direction of the dislocations, exceeding 2 mm.

23. A diamond plate according to claim 22 , wherein the first linear dimension exceeds 3 mm.

24. A diamond plate according to claim 23 , wherein the first linear dimension exceeds 4 mm.

25. A diamond plate according to claim 24 , wherein the first linear dimension exceeds 5 mm.

26. A diamond plate according to claim 25 , wherein the first linear dimension exceeds 7 mm.

27. A diamond plate according to claim 22 , wherein a second linear dimension of each major face orthogonal to the first linear dimension is equal to or greater than the first linear dimension.

28. A single crystal CVD diamond plate, having major surfaces on opposite sides thereof, and having dislocations produced during growth, wherein the mean dislocation direction is oriented in a direction offset from the normal to at least one of the major surfaces.

29. A diamond plate according to claim 28 , wherein the mean dislocation direction is offset from the normal to at least one of the major surfaces by an angle exceeding 20°.

30. A diamond plate according to claim 29 , wherein the mean dislocation direction is offset from the normal to at least one of the major surfaces by an angle exceeding 30°.

31. A diamond plate according to claim 30 , wherein the mean dislocation direction is offset from the normal to at least one of the major surfaces by an angle exceeding 40°.

32. A diamond plate according to claim 31 , wherein the mean dislocation direction is offset from the normal to at least one of the major surfaces by an angle exceeding 50°.

Assignees

• Element Six Tech Ltd

Inventors

• Scarsbrook Geoffrey Alan
• Martineau Philip Maurice
• Twitchen Daniel James

Classifications

• C30B25/20

  the substrate being of the same materials as the epitaxial layer · CPC title

• C30B33/00

  After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title

• C30B25/02 Primary

  Epitaxial-layer growth · CPC title

• C30B29/04 Primary

  Diamond · CPC title

• C30B25/00

  Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth · CPC title