Single-crystal diamond and method of manufacturing the same
US-2024175167-A1 · May 30, 2024 · US
US9725826B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9725826-B2 |
| Application number | US-201214241855-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 30, 2012 |
| Priority date | Sep 2, 2011 |
| Publication date | Aug 8, 2017 |
| Grant date | Aug 8, 2017 |
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Single-crystal diamond is composed of carbon in which a concentration of a carbon isotope 12 C is not lower than 99.9 mass % and a plurality of inevitable impurities other than carbon. The inevitable impurities include nitrogen, boron, hydrogen, and nickel, and a total content of nitrogen, boron, and hydrogen of the plurality of inevitable impurities is not higher than 0.01 mass %. In order to manufacture single-crystal diamond, initially, a hydrocarbon gas in which a concentration of the carbon isotope 12 C is not lower than 99.9 mass % is subjected to denitrification.
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The invention claimed is: 1. Single-crystal diamond, comprising: carbon in which a concentration of a carbon isotope 12 C is not lower than 99.9 mass %; and nitrogen, boron, hydrogen, and nickel, a total content of nitrogen, boron, and hydrogen being not higher than 0.01 mass %, a content of said hydrogen being lower than 0.01 mass %, and a threshold value at which lowering in Knoop hardness occurs in a <110> direction in a (001) plane of a single crystal exceeding 240° C. 2. The single-crystal diamond according to claim 1 , wherein a content of said nitrogen and said boron is lower than a content of said hydrogen. 3. The single-crystal diamond according to claim 1 , wherein said nitrogen is not higher than 0.0001 mass %, said boron is not higher than 0.0001 mass %, and said nickel is not higher than 0.00001 mass %. 4. The single-crystal diamond according to claim 1 , having Knoop hardness not lower than 130 GPa. 5. Single-crystal diamond, comprising: carbon in which a concentration of a carbon isotope 12 C is not lower than 99.9 mass %; and nitrogen, boron, and hydrogen, nickel not being included, a total content of nitrogen, boron, and hydrogen-being not higher than 0.01 mass %, a content of said hydrogen being lower than 0.01 mass %, and a threshold value at which lowering in Knoop hardness occurs in a <110> direction in a (001) plane of a single crystal being equal to or higher than 400° C. 6. The single-crystal diamond according to claim 5 , wherein a content of said nitrogen and said boron is lower than a content of said hydrogen. 7. The single-crystal diamond according to claim 5 , wherein said nitrogen is not higher than 0.0001 mass %, and said boron is not higher than 0.0001 mass %. 8. The single-crystal diamond according to claim 5 , having Knoop hardness not lower than 140 GPa.
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