Single-crystal diamond and manufacturing method thereof

US9725826B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9725826-B2
Application numberUS-201214241855-A
CountryUS
Kind codeB2
Filing dateAug 30, 2012
Priority dateSep 2, 2011
Publication dateAug 8, 2017
Grant dateAug 8, 2017

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Single-crystal diamond is composed of carbon in which a concentration of a carbon isotope 12 C is not lower than 99.9 mass % and a plurality of inevitable impurities other than carbon. The inevitable impurities include nitrogen, boron, hydrogen, and nickel, and a total content of nitrogen, boron, and hydrogen of the plurality of inevitable impurities is not higher than 0.01 mass %. In order to manufacture single-crystal diamond, initially, a hydrocarbon gas in which a concentration of the carbon isotope 12 C is not lower than 99.9 mass % is subjected to denitrification.

First claim

Opening claim text (preview).

The invention claimed is: 1. Single-crystal diamond, comprising: carbon in which a concentration of a carbon isotope 12 C is not lower than 99.9 mass %; and nitrogen, boron, hydrogen, and nickel, a total content of nitrogen, boron, and hydrogen being not higher than 0.01 mass %, a content of said hydrogen being lower than 0.01 mass %, and a threshold value at which lowering in Knoop hardness occurs in a <110> direction in a (001) plane of a single crystal exceeding 240° C. 2. The single-crystal diamond according to claim 1 , wherein a content of said nitrogen and said boron is lower than a content of said hydrogen. 3. The single-crystal diamond according to claim 1 , wherein said nitrogen is not higher than 0.0001 mass %, said boron is not higher than 0.0001 mass %, and said nickel is not higher than 0.00001 mass %. 4. The single-crystal diamond according to claim 1 , having Knoop hardness not lower than 130 GPa. 5. Single-crystal diamond, comprising: carbon in which a concentration of a carbon isotope 12 C is not lower than 99.9 mass %; and nitrogen, boron, and hydrogen, nickel not being included, a total content of nitrogen, boron, and hydrogen-being not higher than 0.01 mass %, a content of said hydrogen being lower than 0.01 mass %, and a threshold value at which lowering in Knoop hardness occurs in a <110> direction in a (001) plane of a single crystal being equal to or higher than 400° C. 6. The single-crystal diamond according to claim 5 , wherein a content of said nitrogen and said boron is lower than a content of said hydrogen. 7. The single-crystal diamond according to claim 5 , wherein said nitrogen is not higher than 0.0001 mass %, and said boron is not higher than 0.0001 mass %. 8. The single-crystal diamond according to claim 5 , having Knoop hardness not lower than 140 GPa.

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What does patent US9725826B2 cover?
Single-crystal diamond is composed of carbon in which a concentration of a carbon isotope 12 C is not lower than 99.9 mass % and a plurality of inevitable impurities other than carbon. The inevitable impurities include nitrogen, boron, hydrogen, and nickel, and a total content of nitrogen, boron, and hydrogen of the plurality of inevitable impurities is not higher than 0.01 mass %. In order to…
Who is the assignee on this patent?
Ikeda Kazuhiro, Sumiya Hitoshi, Sumitomo Electric Industries
What technology area does this patent fall under?
Primary CPC classification C30B29/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 08 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).