Single-crystal diamond and method of manufacturing the same
US-2024175167-A1 · May 30, 2024 · US
Single crystal diamond
US9518338B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9518338-B2 |
| Application number | US-74368007-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 3, 2007 |
| Priority date | Sep 20, 2002 |
| Publication date | Dec 13, 2016 |
| Grant date | Dec 13, 2016 |
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Abstract
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A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapor deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.
First claim
Opening claim text (preview).
We claim: 1. A method of producing a plate of single crystal diamond, which comprises providing a diamond substrate, growing diamond homoepitaxially on a surface of the substrate by chemical vapour deposition (CVD) and severing the homoepitaxial CVD grown diamond transverse to the surface of the substrate on which diamond growth took place to produce a plate of single crystal CVD diamond having side faces and major faces, the major faces being larger in area than the side surfaces, wherein the major faces are transverse to the surface of the substrate. 2. The method according to claim 1 , wherein the homoepitaxial CVD grown diamond is severed normal to the surface of the substrate. 3. The method according to claim 1 , wherein the growth thickness of the homoepitaxial CVD grown diamond is greater than about 10 mm. 4. The method according to claim 3 , wherein the growth thickness of the homoepitaxial CVD grown diamond is greater than about 12 mm. 5. The method according to claim 4 , wherein the growth thickness of the homoepitaxial CVD grown diamond is greater than about 15 mm. 6. The method according to claim 1 , wherein the single crystal CVD diamond plate has at least one linear dimension exceeding 10 mm. 7. The method according to claim 1 , wherein the diamond substrate is a plate of single crystal CVD diamond produced by the method according to claim 1 . 8. The method according to claim 1 , wherein any original substrate remaining in the single crystal CVD diamond plate is removed. 9. The method according to claim 1 , wherein the single crystal CVD diamond plate has a rectangular, square, or parallelogram shape having major surfaces that are transverse to the surface of the substrate. 10. The method according to any one of claim 1 or 2 , wherein in the step of severing the homoepitaxial CVD grown diamond the substrate is also severed. 11. The method according to claim 1 , wherein the diamond substrate has a surface on which the homoepitaxial CVD diamond is grown that is substantially free of surface defects.
Assignees
Inventors
Classifications
- C30B29/04Primary
Diamond · CPC title
After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title
- C30B25/02Primary
Epitaxial-layer growth · CPC title
the substrate being of the same materials as the epitaxial layer · CPC title
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth · CPC title
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- What does patent US9518338B2 cover?
- A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapor deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.
- Who is the assignee on this patent?
- Scarsbrook Geoffrey Alan, Martineau Philip Maurice, Twitchen Daniel James, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification C30B29/04. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 13 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).