SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
US-2017327968-A1 · Nov 16, 2017 · US
characterised by the substrate
characterised by the substrate · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B19/12 |
| Official title | characterised by the substrate |
| Display label | characterised by the substrate |
| Total patents | 247 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 22 |
| 2016 | 37 |
| 2017 | 43 |
| 2018 | 38 |
| 2019 | 29 |
| 2020 | 22 |
| 2021 | 13 |
| 2022 | 12 |
| 2023 | 8 |
| 2024 | 8 |
| 2025 | 12 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for producing n-type group iii nitride single crystal, n-type group iii nitride single crystal, and crystal substrate
US-2016362815-A1 · Dec 15, 2016 · US
Method for manufacturing group 13 nitride crystal and group 13 nitride crystal
US-2016348272-A1 · Dec 1, 2016 · US
Method of producing crystal
US-2016340795-A1 · Nov 24, 2016 · US
Method for producing sic single crystal
US-2016340794-A1 · Nov 24, 2016 · US
Method for Forming Heterogeneous Single Garnet Based Crystals for Passive Q-Switched Lasers and Microlasers
US-2016326666-A1 · Nov 10, 2016 · US
Method associated with a crystalline composition and wafer
US-2016319457-A1 · Nov 3, 2016 · US
Methods using mask structures for substantially defect-free epitaxial growth
US-9476143-B2 · Oct 25, 2016 · US
Method for manufacturing a silicon carbide wafer and respective equipment
US-2016307800-A1 · Oct 20, 2016 · US
Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate
US-9464367-B2 · Oct 11, 2016 · US
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
US-2016273126-A1 · Sep 22, 2016 · US
Substrate for forming a single crystal layer and method of preparing a single crystal layer using the substrate
US-2016273127-A1 · Sep 22, 2016 · US
Layered platinum on freestanding palladium nano-substrates for electrocatalytic applications and methods of making thereof
US-2016276674-A1 · Sep 22, 2016 · US
Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
US-9447517-B2 · Sep 20, 2016 · US
Photoalignment of materials including liquid crystals
US-9441163-B2 · Sep 13, 2016 · US
Sic single crystal and method for producing same
US-2016237590-A1 · Aug 18, 2016 · US
Sic single crystal and method for producing same
US-2016230309-A1 · Aug 11, 2016 · US
GaN Template Substrate
US-2016233380-A1 · Aug 11, 2016 · US
Reaction chamber including a susceptor having draining openings for manufacturing a silicon carbide wafer
US-9406504-B2 · Aug 2, 2016 · US
N-type sic single crystal and method for its production
US-2016208411-A1 · Jul 21, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B19/12?
- CPC C30B19/12 is the Cooperative Patent Classification code for “characterised by the substrate.”
- How many patents are filed under CPC C30B19/12 (characterised by the substrate)?
- Our database includes 247 publications tagged with this CPC code.
- Is patent activity under CPC C30B19/12 growing?
- Publication counts under this code: 8 in 2024 vs 12 in 2025 (latest complete years).