Reaction chamber including a susceptor having draining openings for manufacturing a silicon carbide wafer

Patent metadata

Field	Value
Publication number	US-9406504-B2
Application number	US-201213714277-A
Country	US
Kind code	B2
Filing date	Dec 13, 2012
Priority date	Dec 15, 2011
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.

First claim

The invention claimed is:

1. A reaction chamber for manufacturing a semiconductor material wafer, the reaction chamber comprising:
a platform having sidewalls;
a gathering tank positioned on the platform and between the sidewalls, the gathering tank having a plurality of protruding elements;
a susceptor having a plurality of draining openings that remain open to receive melted material to flow therethrough and in to the gathering tank, the plurality of protruding elements configured to engage the plurality of draining openings;
heating means for heating the susceptor and to cause the material to melt; and
conduction means for providing a precursors flow.

2. The reaction chamber according to claim 1 , wherein said susceptor and said gathering tank include graphite.

3. The reaction chamber according to claim 1 , wherein said gathering tank is configured to move from a first configuration, wherein the tank is in contact with the susceptor and forms therewith a single body, to a second configuration, wherein the tank and the susceptor are detached, and vice versa.

4. The reaction chamber according to claim 3 , wherein the gathering tank is configured to close said draining openings and impede the flow of the melted material when the gathering tank is in the first configuration, so to allow the coexistence of the melted material in contact with the semiconductor material wafer.

5. The reaction chamber according to claim 4 , wherein the plurality of protruding elements engage the draining openings of the susceptor when the gathering tank is in the first configuration.

6. A reaction chamber comprising:
a susceptor having a plurality of draining openings that remain open to allow melted material to flow therethrough;
a gathering tank having sidewalls and a bottom surface configured to gather the melted material that flows through the draining openings of the susceptor, the gathering tank having a plurality of protruding elements on the bottom surface configured to plug the plurality of draining openings of the susceptor;
a heater configured to heat the susceptor and to cause the material to melt;
an input duct configured to input precursors; and
an output duct configured to output reaction gases.

7. The reaction chamber according to claim 6 , wherein said gathering tank is configured to move between a first configuration, wherein the tank is in contact with the susceptor, and a second configuration, wherein the tank and the susceptor are detached.

8. The reaction chamber according to claim 6 , wherein said susceptor and said gathering tank include graphite.

9. A reaction chamber, comprising:
a first platform positioned inside of the reaction chamber, the platform having lateral supports, a center portion, and a plurality of apertures in the center portion;
a second platform underlying the first platform;
a third platform underlying the second platform, the third platform having sidewalls;
a heater configured to heat the first platform; and
a receptacle positioned on the second platform and below the first platform, the second platform configured to move the receptacle to a first position and a second position, the receptacle abutting the center portion of the first platform in the first position, the receptacle being spaced from the center portion of the first platform and the lateral supports resting on the sidewalls of the third platform in the second position.

10. The reaction chamber of claim 9 , wherein the receptacle is configured to collect and hold material that flows through the plurality of apertures.

11. The reaction chamber of claim 9 , wherein the receptacle includes a plurality of protruding elements, the protruding elements being inserted in to the plurality of apertures while the receptacle is in the first position.

12. The reaction chamber of claim 9 , wherein the second platform includes sidewalls, the receptacle positioned between the sidewalls of the second platform.

13. The reaction chamber of claim 9 , wherein the second platform includes a vertical support that extends through the third platform.

14. The reaction chamber according to claim 1 , wherein the plurality of draining openings are a plurality of slits extending in the same direction.

15. The reaction chamber according to claim 1 , wherein the plurality of draining openings are arranged in a plurality of rows.

16. The reaction chamber according to claim 6 , wherein the plurality of draining openings are a plurality of slits extending in the same direction.

17. The reaction chamber according to claim 6 , wherein the plurality of draining openings are arranged in a plurality of rows.

Assignees

• St Microelectronics Srl

Inventors

• Frisina Ferruccio
• Abbondanza Giuseppe

Classifications

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P95/11 Primary

  Separation of active layers from substrates · CPC title

• C23C16/01

  on temporary substrates, e.g. substrates subsequently removed by etching · CPC title