Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate

Patent metadata

Field	Value
Publication number	US-9464367-B2
Application number	US-201414474924-A
Country	US
Kind code	B2
Filing date	Sep 2, 2014
Priority date	Aug 31, 2010
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt.

First claim

What is claimed is:

1. A nitride crystal, comprising:
a first portion of a gallium nitride single crystal which is doped with oxygen at a concentration of 10 17 cm −3 or more and boron at a concentration of 10 17 cm −3 or more, the first portion including a prismatic shape portion; and
a second portion, which is different from the gallium nitride single crystal in oxygen concentration or boron concentration and is surrounded by the gallium nitride single crystal.

2. A nitride crystal, comprising:
a first portion of a gallium nitride single crystal which is doped with oxygen at a concentration of 10 17 cm −3 or more and boron at a concentration of from 10 17 cm −3 to 3×10 18 cm −3 ; and
a second portion, which has a different oxygen concentration or boron concentration from the gallium nitride single crystal and is surrounded by the gallium nitride single crystal.

Assignees

• Iwata Hirokazu
• Ricoh Co Ltd

Inventors

• Iwata Hirokazu

Classifications

• H10H20/0137

  the light-emitting regions comprising nitride materials · CPC title

• C01B21/0632

  with gallium, indium or thallium · CPC title

• C30B9/10

  Metal solvents · CPC title

• C30B9/00

  Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) · CPC title

• C30B29/403

  AIII-nitrides · CPC title