GaN Template Substrate

Patent metadata

Field	Value
Publication number	US-2016233380-A1
Application number	US-201615099716-A
Country	US
Kind code	A1
Filing date	Apr 15, 2016
Priority date	Nov 7, 2013
Publication date	Aug 11, 2016
Grant date	—

Abstract

A device substrate in which no streaked morphological abnormality occurs is achieved. A GaN template substrate includes: a base substrate; and a first GaN layer epitaxially formed on the base substrate, wherein the first GaN layer has a compressive stress greater than or equal to 260 MPa that is intrinsic in an inplane direction, or a full width at half maximum of a peak representing E2 phonons of GaN near a wavenumber of 568 cm −1 in a Raman spectrum is lower than or equal to 1.8 cm −1 . With all of these requirements, a device substrate includes: a second GaN layer epitaxially formed on the first GaN layer; and a device layer epitaxially formed on the second GaN layer and made of a group 13 nitride.

First claim

1 . A GaN template substrate, comprising:
a base substrate made of sapphire; a buffer layer formed on said base substrate and made of GaN; and a first GaN layer epitaxially formed on said buffer layer, wherein said first GaN layer has a compressive stress greater than or equal to 260 MPa, the compressive stress being intrinsic in an inplane direction.

2 . A GaN template substrate, comprising:
a base substrate made of sapphire; and a first GaN layer epitaxially formed on said base substrate, wherein a full width at half maximum of a peak near a wavenumber of 568 cm −1 in a Raman spectrum is lower than or equal to 1.8 cm −1 , the peak representing E2 phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy.

3 . A GaN template substrate, comprising:
a base substrate made of sapphire; a buffer layer formed on said base substrate and made of GaN; and a first GaN layer epitaxially formed on said buffer layer, wherein said first GaN layer has a compressive stress greater than or equal to 260 MPa, the compressive stress being intrinsic in an inplane direction, and a full width at half maximum of a peak near a wavenumber of 568 cm −1 in a Raman spectrum is lower than or equal to 1.8 cm −1 , the peak representing E2 phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy.

4 . The GaN template substrate according to claim 1 ,
wherein a value of the compressive stress is obtained from a Raman spectrum obtained by measuring said first GaN layer by Raman spectroscopy.

5 . The GaN template substrate according to claim 3 ,
wherein a value of the compressive stress is obtained from a Raman spectrum obtained by measuring said first GaN layer by Raman spectroscopy.

6 . The GaN template substrate according to claim 1 , further comprising
a second GaN layer epitaxially formed on said first GaN layer.

7 . The GaN template substrate according to claim 2 , further comprising
a second GaN layer epitaxially formed on said first GaN layer.

8 . The GaN template substrate according to claim 3 , further comprising
a second GaN layer epitaxially formed on said first GaN layer.

9 . The GaN template substrate according to claim 1 ,
wherein said first GaN layer is formed with a thickness of 1 μm to 5 μm.

10 . The GaN template substrate according to claim 2 ,
wherein said first GaN layer is formed with a thickness of 1 μm to 5 μm.

11 . The GaN template substrate according to claim 3 ,
wherein said first GaN layer is formed with a thickness of 1 μm to 5 μm.

Assignees

• Ngk Insulators Ltd

Inventors

• Ichimura Mikiya
• Kuraoka Yoshitaka
• Namerikawa Masahiko

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3248

  consisting of two layers · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title