Substrate for forming a single crystal layer and method of preparing a single crystal layer using the substrate

Patent metadata

Field	Value
Publication number	US-2016273127-A1
Application number	US-201615071141-A
Country	US
Kind code	A1
Filing date	Mar 15, 2016
Priority date	Mar 16, 2015
Publication date	Sep 22, 2016
Grant date	—

Abstract

Exemplary embodiments of the inventive concept provide a substrate for forming a single crystal layer with a lyophilic area having a high affinity to a single crystal material to maintain a position of the solution of the single crystal material, and a crystal growth inducing rail part formed in a shape of a line in the lyophilic area and having a higher affinity to the solution of the single crystal material than the lyophilic area.

First claim

What is claimed is:

1 . A substrate for forming a single crystal layer, the substrate comprising:
a lyophilic area having a high affinity to a single crystal material to maintain a position of a solution of the single crystal material; and a crystal growth inducing rail part having a shape of a line in the lyophilic area and having a higher affinity to the solution of the single crystal material than that of the lyophilic area.

2 . The substrate for forming a single crystal layer of claim 1 , wherein the crystal growth inducing rail part is formed across both ends of the lyophilic area in a crystal growth direction of the single crystal material.

3 . The substrate for forming a single crystal layer of claim 2 , wherein an end portion of the crystal growth inducing rail part in a width direction substantially perpendicular to the crystal growth direction is formed closer to a center of the lyophilic area than an end portion of the lyophilic area.

4 . The substrate for forming a single crystal layer of claim 3 , wherein one end portion of the crystal growth inducing rail part in a longitudinal direction is in a shape of an acute angle.

5 . The substrate for forming a single crystal layer of claim 1 , wherein an end portion of the crystal growth inducing rail part in a width direction substantially perpendicular to a longitudinal direction of the crystal growth inducing rail part is formed closer to a center of the lyophilic area than an end portion of the lyophilic area.

6 . The substrate for forming a single crystal layer of claim 1 , wherein one end portion of the crystal growth inducing rail part in a longitudinal direction is in a shape of an acute angle.

7 . The substrate for forming a single crystal layer of claim 6 , wherein an angle of the one end portion is in a range of about 30° to about 45°.

8 . A method of preparing a single crystal layer, the method comprising:
providing a solution of a single crystal material on a substrate for forming a single crystal layer having a lyophilic area and a crystal growth inducing rail part; and moving the solution of the single crystal material from one end portion of the crystal growth inducing rail part in a longitudinal direction toward another end portion of the crystal growth inducing rail part, wherein the lyophilic area has a high affinity to the single crystal material to maintain the position of the solution of the single crystal material; and wherein the crystal growth inducing rail part is formed in a shape of a line in the lyophilic area and has a higher affinity to the solution of the single crystal material than that of the lyophilic area.

9 . The method of claim 8 , wherein the crystal growth inducing rail part is formed across both ends of the lyophilic area in a crystal growth direction of the single crystal material.

10 . The method of claim 9 , wherein an end portion of the crystal growth inducing rail part in a width direction substantially perpendicular to the crystal growth direction is formed closer to a center of the lyophilic area than an end portion of the lyophilic area.

11 . The method of claim 10 , wherein one end portion of the crystal growth inducing rail part in a longitudinal direction is in a shape of an acute angle.

12 . The method of claim 8 , wherein an end portion of the crystal growth inducing rail part in a width direction substantially perpendicular to a longitudinal direction of the crystal growth inducing rail part is formed closer to a center of the lyophilic area than an end portion of the lyophilic area.

13 . The method of claim 8 , wherein one end portion of the crystal growth inducing rail part in a longitudinal direction is in a shape of an acute angle.

14 . The method of claim 13 , wherein an angle of the one end portion is in a range of about 30° to about 45°.

Assignees

• Samsung Display Co Ltd

Inventors

• Suganuma Naotoshi
• Yoshimoto Noriyuki
• Kamiya Ryosuke

Classifications

• C30B29/54 Primary

  Organic compounds · CPC title

• C30B19/12 Primary

  characterised by the substrate · CPC title

• C30B7/005

  Epitaxial layer growth · CPC title

• B32B3/08

  characterised by added members at particular parts {(layer formed of separate pieces of material which are juxtaposed side-by-side B32B3/14, B32B3/18)} · CPC title