Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon

Patent metadata

Field	Value
Publication number	US-9447517-B2
Application number	US-201113996071-A
Country	US
Kind code	B2
Filing date	Jun 29, 2011
Priority date	Dec 24, 2010
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.

First claim

The invention claimed is:

1. A method for liquid phase epitaxial growth of a monocrystalline silicon carbide comprising the steps of:
preparing a seed material and a feed material, the seed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph, wherein upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph; and
heating the seed material and the feed material with the surface layers of the seed material and the feed material facing each other through a silicon melt layer to epitaxially grow a monocrystalline silicon carbide on the surface layer of the seed material.

2. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the peak other than the TO peak and the LO peak is observed at a lower wavenumber than that of the TO peak.

3. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the peak other than the TO peak and the LO peak has a peak intensity 0.3 or greater times the peak intensity of the TO peak.

4. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the absolute amount of shift of the LO peak from 972 cm −1 is 4 cm −1 or more.

5. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 4 , wherein the amount of shift of the LO peak from 972 cm −1 is 4 cm −1 or more.

6. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the full width at half-maximum of the LO peak is 15 cm −1 or less.

7. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the surface layer contains a polycrystalline silicon carbide with a 3C crystal polymorph as a major ingredient.

8. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 7 , wherein the surface layer is substantially made of the polycrystalline silicon carbide with a 3C crystal polymorph.

9. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the seed material including: a support member; and a polycrystalline silicon carbide film formed on the support member and forming the surface layer.

10. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 9 , wherein the polycrystalline silicon carbide film has a thickness within a range of 30 μm to 800 μm.

11. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the seed material being formed of a polycrystalline silicon carbide material containing a polycrystalline silicon carbide with a 3C crystal polymorph.

12. The method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the surface layer of the feed material contains a polycrystalline silicon carbide with a 3C crystal polymorph.

Assignees

• Torimi Satoshi
• Nogami Satoru
• Matsumoto Tsuyoshi
• Toyo Tanso Co

Inventors

• Torimi Satoshi
• Nogami Satoru
• Matsumoto Tsuyoshi

Classifications

• C30B29/36

  Carbides · CPC title

• Y10T428/26

  Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension · CPC title

• C30B28/12

  directly from the gas state · CPC title

• C30B19/12 Primary

  characterised by the substrate · CPC title